Advanced ultra low k SiCOH dielectrics prepared by built-in engineered pore size and bonding structured with cyclic organosilicon precursors
Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon.
1. An ultra-low dielectric (k) film comprising:
a covalently bonded network comprising atoms of silicon, oxygen, carbon, hydrogen, and a cyclotrisilane structure; and
a plurality of pores having a pore size distribution (PSD) of less than about 2.0 nanometers (nm);
wherein the ultra-low k film has a k value of less than about 2.7 and comprises about 35 to about 70 atomic % carbon and about 10 to about 40 atomic % silicon.
2. The ultra-low k film of claim 1 , wherein the cyclotrisilane structure further comprises an alkyl group or an alkenyl group attached to at least one Si atom within the cyclotrisilane structure.
3. The ultra-low k film of claim 2 , wherein the alkyl group is a methyl group, an ethyl group, a propyl group, a butyl group, or a pentyl group.
4. The ultra-low k film of claim 2 , wherein the alkenyl group is an ethenyl group.
5. The ultra-low k film of claim 1 , wherein the ultra-low k film has a modulus of at least about 6 gigapascals (GPa).
6. A method of forming an ultra-low k film, the method comprising:
flowing a single precursor comprising a cyclotrisilane structure to deposit a preliminary film comprising a porogen onto a substrate; and
removing at least a portion of the porogen from the preliminary film to form the ultra-low k film having an ultra-low k value of less than about 2.7 and comprising about 35 to about 70 atomic % carbon and about 10 to about 40 atomic % silicon.
7. The method of claim 6 , wherein the single precursor is flowed at a radio frequency (RF) power of less than about 500 watts (W).
8. The method of claim 7 , wherein the RF power is less than about 300 W.
9. The method of claim 6 , wherein the ultra-low k film comprises a plurality of pores having a PSD of less than about 1.1 nm.
10. The method of claim 6 , wherein the single precursor is 2,2,4,4,6,6-hexaethyl-tricyclosiloxane.
11. The method of claim 6 , wherein the single precursor is 1,3,5-trivynyl-1,3,5-trimethylcyclotrisiloxane.
12. The method of claim 6 , wherein the single precursor has a porosity in a range between about 5 and about 45%.
13. The method of claim 6 , further comprising flowing the single precursor in the presence of an oxidizing gas.
14. The method of claim 13 , wherein the oxidizing gas is carbon dioxide, oxygen, nitrous oxide, or any combination thereof.
15. A method of forming an ultra-low k film, the method comprising:
flowing a single precursor to deposit a preliminary film comprising a porogen onto a substrate; and
curing the preliminary film to remove at least a portion of the porogen from the preliminary film to form the ultra-low k film comprising about 35 to about 70 atomic % carbon and about 10 to about 40 atomic % silicon;
wherein the single precursor has the following structure:
and
wherein further a, b, c, d, e, and f are each independently an alkyl group, an alkenyl group, an alkoxy group, an epoxy group, a phenyl group, or an alkynyl group.
16. The method of claim 15 , wherein the single precursor is flowed at a temperature in a range between about 180 and about 250° C.
17. The method of claim 15 , wherein curing is UV curing in the presence of an inert gas.
18. The method of claim 15 , wherein at least one of a, b, c, d, e, and f is an ethyl group or an ethenyl group.
19. The method of claim 15 , wherein the ultra-low k film comprises a plurality of pores having a PSD of less than about 0.8 nm.