Nonvolatile memory integrated circuit with built-in redundancy
According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.
1. A semiconductor integrated circuit comprising:
a memory cell including first and second electrodes and a resistance change film therebetween, the resistance change film being reversibly changeable between first and second resistive states; and
a control circuit controlling a potential difference between the first and second electrodes,
wherein the control circuit reversibly changes the memory cell to the first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode,
the control circuit reversibly changes the memory cell to the second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode, and
the control circuit irreversibly fixes the memory cell to a third resistive state by applying a fifth potential to the first electrode and by applying a sixth potential greater than the fifth potential to the second electrode.
2. The circuit of claim 1 , wherein
a resistance value of the first resistive state is greater than a resistance value of the second resistance state.
3. The circuit of claim 2 , wherein
a potential difference between the third and fourth potentials is greater than a potential difference between the first and second potentials.
4. The circuit of claim 1 , wherein
an absolute value of a potential difference between the fifth and sixth potentials is greater than an absolute value of a potential difference between the first and second potentials.
5. The circuit of claim 1 , wherein
an absolute value of a potential difference between the fifth and sixth potentials is greater than an absolute value of a potential difference between the third and fourth potentials.
6. The circuit of claim 1 , wherein
the first and second electrodes include at least one of a metal, a semiconductor, and an alloy, the metal being at least one of Ni, Pt, Au, Ag, Ru, Ir, Co, Ti, Al, Rh, Nb, and W, the semiconductor being at least one of polysilicon and silicide, the alloy being at least one of Titanium-Aluminum-Nitride, Strontium-Ruthenium-Oxide, Ruthenium-Nitride, Titanium-Nitride, Tantalum-Nitride, Lanthanum-Nickel-Oxide, Plutinum-Irdium-Oxide, Plutinum-Rhodium-Oxide, Tantalum-Aluminum-Nitride, and Indium-Tin-Oxide, and
the resistance change film includes at least one of Hafnium oxide, Silicon oxide, Tantalum oxide, Zinc oxide, Titanium oxide, Nickel oxide, and Tungsten oxide.
7. The circuit of claim 1 , further comprising:
a word line extending in a first direction;
a bit line extending in a second direction intersecting the first direction;
a first driver driving the word line; and
a second driver driving the bit line,
wherein the memory cell is connected between the word line and the bit line.
8. The circuit of claim 1 , further comprising:
a first node, a second node, a third node and a fourth node;
a first cell connected between the first and second nodes;
a second cell connected between the first and third nodes;
a first switching element including a first control terminal and switching connection/disconnection between the first and fourth nodes;
a second switching element including a second control terminal connected to the first node;
a first driver connected to the first control terminal; and
a second driver connected to the second and third nodes,
wherein each of the first and second cells comprises the memory cell.
9. The circuit of claim 8 , wherein
the first electrode in the first cell and the first electrode in the second cell are connected to the first node,
the second electrode in the first cell is connected to the second node, and
the second electrode in the second cell is connected to the third node.
10. The circuit of claim 8 , wherein
the second electrode in the first cell and the second electrode in the second cell are connected to the first node,
the first electrode in the first cell is connected to the second node, and
the first electrode in the second cell is connected to the third node.
11. The circuit of claim 8 , wherein
the resistance change film in the first cell has a resistive state different from a resistive state of the resistance change film in the second cell.
12. The circuit of claim 1 , further comprising:
a memory cell array including a first cell and a second cell for displacing the first cell when the first cell is defective, by irreversibly fixing the first cell to a fourth resistive state by applying a seventh potential to the first electrode and by applying a eighth potential greater than the seventh potential to the second electrode;
wherein each of the first and second cell comprises the memory cell.
13. The circuit of claim 1 , further comprising:
a word line extending in a first direction;
a bit line extending in a second direction intersecting the first direction;
a first driver driving the word line;
a second driver driving the bit line;
a selector cell connected between the word line and the first driver; and
a third driver connected to a node between the word line and the selector cell,
wherein the selector cell comprises the memory cell.
14. A semiconductor integrated circuit comprising:
a memory cell including first and second electrodes and a resistance change film therebetween, the resistance change film being reversibly changeable between first and second resistive states; and
a control circuit controlling a potential difference between the first and second electrodes,
wherein the control circuit reversibly changes the memory cell to the first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode,
the control circuit reversibly changes the memory cell to the second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode, and
the control circuit irreversibly fixes the memory cell to a third resistive state by applying a fifth potential to the first electrode and by applying a sixth potential smaller than the fifth potential to the second electrode.
15. The circuit of claim 14 , wherein
the control circuit irreversibly fixes the memory cell to the fourth resistive state by applying a seventh potential to the first electrode and by applying an eighth potential greater than the seventh potential to the second electrode.
16. The circuit of claim 14 , wherein
the memory cell includes a diode serially connected to the resistance change film.
17. The circuit of claim 14 , wherein
a resistance value of the first resistive state is greater than a resistance value of the second resistive state.
18. The circuit of claim 14 , wherein
the first and second electrodes include at least one of a metal, a semiconductor, and an alloy, the metal being at least one of Ni, Pt, Au, Ag, Ru, Ir, Co, Ti, Al, Rh, Nb, and W, the semiconductor being at least one of polysilicon and silicide, the alloy being at least one of Titanium-Aluminum-Nitride, Strontium-Ruthenium-Oxide, Ruthenium-Nitride, Titanium-Nitride, Tantalum-Nitride, Lanthanum-Nickel-Oxide, Plutinum-Irdium-Oxide, Plutinum-Rhodium-Oxide, Tantalum-Aluminum-Nitride, and Indium-Tin-Oxide, and
the resistance change film includes at least one of Hafnium oxide, Silicon oxide, Tantalum oxide, Zinc oxide, Titanium oxide, Nickel oxide, and Tungsten oxide.
19. The circuit of claim 14 , further comprising:
a word line extending in a first direction;
a bit line extending in a second direction intersecting the first direction;
a first driver driving the word line; and
a second driver driving the bit line,
wherein the memory cell is connected between the word line and the bit line.
20. The circuit of claim 14 , further comprising:
a first node, a second node, a third node and a fourth node;
a first cell connected between the first and second nodes;
a second cell connected between the first and third nodes;
a first switching element including a first control terminal and switching connection/disconnection between the first and fourth nodes;
a second switching element including a second control terminal connected to the first node;
a first driver connected to the first control terminal; and
a second driver connected to the second and third nodes,
wherein each of the first and second cells comprises the memory cell.
21. The circuit of claim 15 , further comprising:
a first node, a second node, a third node and a fourth node;
a first cell connected between the first and second nodes;
a second cell connected between the first and third nodes;
a first switching element including a first control terminal and switching connection/disconnection between the first and fourth nodes;
a second switching element including a second control terminal connected to the first node;
a first driver connected to the first control terminal; and
a second driver connected to the second and third nodes,
wherein each of the first and second cells comprises the memory cell, and
the resistive state of the resistance change film in the second cell is fixed irreversibly, when the resistive state of the resistance change film in the first cell is fixed irreversibly.