Manufacturing method of semiconductor device comprising oxide semiconductor film
In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.
1. A manufacturing method of a semiconductor device comprising the steps of:
forming an oxide semiconductor film;
forming an oxide insulating film over the oxide semiconductor film;
forming a protective film over the oxide insulating film; and
adding oxygen to the oxide insulating film through the protective film,
wherein the oxide semiconductor film is formed under a condition in which a first oxygen vacancy is formed,
wherein the oxygen from the oxide insulating film fills the first oxygen vacancy, and
wherein the protective film includes an oxide including In.
2. The manufacturing method of a semiconductor device according to claim 1 , further comprising, before the step of forming the protective film, a step of heating the oxide insulating film.
3. The manufacturing method of a semiconductor device according to claim 1 , further comprising a step of removing the protective film.
4. The manufacturing method of a semiconductor device according to claim 1 , further comprising, before the step of forming the oxide insulating film, a step of heating the oxide semiconductor film,
wherein a second oxygen vacancy is formed in the oxide semiconductor film in the step of heating the oxide semiconductor film, and
wherein the oxygen from the oxide insulating film fills the first oxygen vacancy and the second oxygen vacancy.
5. The manufacturing method of a semiconductor device according to claim 4 ,
wherein the step of heating the oxide semiconductor film is performed in an atmosphere in which an oxygen partial pressure is lower than or equal to 1%.
6. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film is formed with a sputtering apparatus, and
wherein the condition in which the first oxygen vacancy is formed is an oxygen partial pressure in the sputtering apparatus of higher than 0% and lower than 50%.
7. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes In, Zn, and M, and
wherein M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.
8. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes a crystal part, and
wherein the crystal part includes a portion whose c-axis is parallel to a normal vector of a surface over which the oxide semiconductor film is formed.
9. The manufacturing method of a semiconductor device according to claim 1 , wherein the protective film further includes Sn and Si.
10. The manufacturing method of a semiconductor device according to claim 1 , wherein the step of adding oxygen is performed with a plasma treatment apparatus.
11. A manufacturing method of a semiconductor device comprising the steps of:
forming an oxide semiconductor film;
forming an oxide insulating film over the oxide semiconductor film;
heating the oxide insulating film;
forming a protective film over the oxide insulating film;
adding oxygen to the oxide insulating film through the protective film;
removing the protective film; and
forming a nitride insulating film over the oxide insulating film after the step of removing the protective film,
wherein the oxide semiconductor film is formed under a condition in which a first oxygen vacancy is formed,
wherein the oxygen from the oxide insulating film fills the first oxygen vacancy, and
wherein the protective film includes an oxide including In.
12. The manufacturing method of a semiconductor device according to claim 11 , further comprising, before the step of forming the oxide insulating film, a step of heating the oxide semiconductor film,
wherein a second oxygen vacancy is formed in the oxide semiconductor film in the step of heating the oxide semiconductor film, and
wherein the oxygen from the oxide insulating film fills the first oxygen vacancy and the second oxygen vacancy.
13. The manufacturing method of a semiconductor device according to claim 12 ,
wherein the step of heating the oxide semiconductor film is performed in an atmosphere in which an oxygen partial pressure is lower than or equal to 1%.
14. The manufacturing method of a semiconductor device according to claim 11 ,
wherein the oxide semiconductor film is formed with a sputtering apparatus, and
wherein the condition in which the first oxygen vacancy is formed is an oxygen partial pressure in the sputtering apparatus of higher than 0% and lower than 50%.
15. The manufacturing method of a semiconductor device according to claim 11 ,
wherein the oxide semiconductor film includes In, Zn, and M, and
wherein M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.
16. The manufacturing method of a semiconductor device according to claim 11 ,
wherein the oxide semiconductor film includes a crystal part, and
wherein the crystal part includes a portion whose c-axis is parallel to a normal vector of a surface over which the oxide semiconductor film is formed.
17. The manufacturing method of a semiconductor device according to claim 11 , wherein the protective film further includes Sn and Si.
18. The manufacturing method of a semiconductor device according to claim 11 , wherein the step of adding oxygen is performed with a plasma treatment apparatus.