Semiconductor memory device and production method thereof
A semiconductor memory device includes a silicon substrate having an impurity diffusion region, and a memory cell array. The memory cell array includes conductive layers laminated on the silicon substrate via interlayer insulation layers, a semiconductor layer extending in a direction of the lamination of the conductive layers, a charge storage film disposed between the conductive layers and the semiconductor layer, and an electrode disposed on the conductive layers. A groove having a direction of the lamination as a depth direction and a first direction different from the lamination direction as a lengthwise direction is formed through the conductive layers. The silicon substrate includes a silicide film disposed in the impurity diffusion region along the groove. The memory cell array includes a conductor, which is in contact with the electrode and the silicide film, in the groove. In the first direction, the conductor is shorter in length than the groove.
1. A semiconductor memory device comprising:
a silicon substrate having an impurity diffusion region; and
a memory cell array including a plurality of conductive layers laminated on the silicon substrate via interlayer insulation layers, a semiconductor layer extending in a direction of the lamination of the plurality of conductive layers, a charge storage film disposed between the plurality of conductive layers and the semiconductor layer, and an electrode disposed on the plurality of conductive layers, a groove having a direction of the lamination as a depth direction and a first direction different from the lamination direction as a lengthwise direction being formed through the plurality of conductive layers,
the silicon substrate including a silicide film disposed in the impurity diffusion region along the groove, and
the memory cell array including a conductor, which is in contact with the electrode and the silicide film, in the groove, the conductor having a length in the first direction shorter than a length of the groove in the first direction.
2. The semiconductor memory device according to claim 1 , wherein the silicide film includes cobalt silicide or nickel silicide.
3. The semiconductor memory device according to claim 1 , wherein the silicide film has a length in the first direction longer than the length of the conductor in the first direction.
4. The semiconductor memory device according to claim 1 , wherein the conductor is disposed at an end portion of the groove.
5. The semiconductor memory device according to claim 1 , wherein the memory cell array includes a plurality of the conductors disposed in the groove via insulation films.
6. The semiconductor memory device according to claim 1 , wherein the groove has a different width depending upon whether the groove is located near the conductor or located in other places.
7. The semiconductor memory device according to claim 1 , wherein in the first direction, the conductor is disposed in a place where memory cells are not disposed.
8. A semiconductor memory device comprising:
a silicon substrate having an impurity diffusion region; and
a memory cell array including a plurality of conductive layers laminated on the silicon substrate via interlayer insulation layers, a semiconductor layer extending in a direction of the lamination of the plurality of conductive layers, a charge storage film disposed between the plurality of conductive layers and the semiconductor layer, and an electrode disposed on the plurality of conductive layers, a groove having a direction of the lamination as a depth direction and a first direction different from the lamination direction as a lengthwise direction being formed through the plurality of conductive layers,
the memory cell array including first and second grooves as the groove,
the silicon substrate including a first silicide film disposed in the impurity diffusion region along the first groove disposed and a second silicide film disposed in the impurity diffusion region along the second groove, and
the memory cell array including a conductor, which is in contact with the electrode and the second silicide film, in the second groove, the second silicide film being in contact with the first silicide film.
9. The semiconductor memory device according to claim 8 , wherein each of the first silicide film and the second silicide film includes cobalt silicide or nickel silicide.
10. The semiconductor memory device according to claim 8 , wherein the first groove has a width narrower than that of the second groove.
11. The semiconductor memory device according to claim 8 , wherein a contact portion between the first silicide film and the second silicide film is in an end portion of the first groove.
12. The semiconductor memory device according to claim 8 , wherein a contact portion between the first silicide film and the second silicide film is T letter formed.
13. The semiconductor memory device according to claim 8 , wherein a contact portion between the first silicide film and the second silicide film takes a shape of a straight line.
14. The semiconductor memory device according to claim 8 , wherein in the first direction, the conductor is disposed in a place where memory cells are not disposed.
15. The semiconductor memory device according to claim 8 , wherein the memory cell array is divided into a plurality of memory blocks having the second groove as a boundary.