Image sensor and a method to manufacture thereof
The disclosed embodiments include an image sensor and a method to manufacture thereof. In one embodiment, the method includes forming a plurality of semiconductor slices having a uniform width, at least two of the semiconductor slices having different lengths, and each of the semiconductor slices having a slice edge defining a side of the semiconductor slice. The method further includes arranging the semiconductor slices to form a semi-rectangular shape defining boundaries of the image sensor, each of the semiconductor slices being disposed proximate to another semiconductor slice of the plurality of semiconductor slices. Forming each semiconductor slice includes forming a plurality of pixel arrays over the semiconductor slice, the pixel arrays having an approximately uniform pixel pitch, and forming a seal ring around the semiconductor slice, the seal ring enclosing the semiconductor slice and the pixel arrays of the semiconductor slice, and each semiconductor slice having a different seal ring.
1. A complementary metal-oxide-semiconductor (CMOS) image sensor, the CMOS image sensor comprising:
a single mono-crystalline semiconductor substrate;
a plurality of semiconductor slices formed on the single mono-crystalline semiconductor substrate, the plurality of semiconductor slices having a uniform width, the plurality of semiconductor slices being formed of different lengths and being arranged to form a semi-rectangular shape defining boundaries of the CMOS image sensor, each of the plurality of semiconductor slices being disposed proximate to another semiconductor slice of the plurality of semiconductor slices, the plurality of semiconductor slices being integrally connected on the single mono-crystalline semiconductor substrate,
wherein each semiconductor slice of the plurality of semiconductor slices has a slice edge defining a side of the semiconductor slice, and wherein each semiconductor slice further comprises:
a plurality of pixel arrays having an approximately uniform pixel pitch, each pixel array having rows and columns of pixels;
a respective guard ring surrounding the plurality of pixel arrays;
a respective seal ring enclosing the semiconductor slice; and
a column of row-driver circuitry, wherein the column of row-driver circuitry is positioned proximate to the plurality of pixel arrays along a first side of the plurality of pixel arrays,
wherein the seal rings of adjacent semiconductor slices are spaced apart from each other;
wherein the guard rings of adjacent semiconductor slices are spaced apart from each other;
wherein the guard ring, row-driver circuitry, slice edge, and seal ring of a first semiconductor slice among said plurality of semiconductor slices, and the seal ring, slice edge, and guard ring of a second semiconductor slice among said plurality of semiconductor slices being adjacent to said first semiconductor slice have a combined width such that a dead space between pixels of the first and second semiconductor slices is formed that corresponds to a single column of said pixels;
wherein the column of row-driver circuitry of each slice is arranged in between the seal ring and guard ring; and
wherein a respective column of row-driver circuitry on each semiconductor slice of the plurality of semiconductor slices independently controls the plurality of pixel arrays of the respective semiconductor slice.
2. The CMOS image sensor of claim 1 , wherein each semiconductor slice of the plurality of semiconductor slices further comprises a control and readout circuitry, wherein the control and readout circuitry is over a location that does not abut any pixel array of the plurality of pixel arrays of the semiconductor slice.
3. The CMOS image sensor of claim 1 , further comprising:
a printed circuit board disposed proximate to a backside of the CMOS image sensor; and
a scintillator material disposed proximate to a front side of the CMOS image sensor.
4. The CMOS image sensor of claim 1 , further comprising a printed circuit board and a scintillator material disposed proximate to a front side of the CMOS image sensor.
5. The CMOS image sensor of claim 1 , wherein proximate semiconductor slices of the plurality of semiconductor slices are combined using a stitching technology.
6. The CMOS image sensor of claim 1 , wherein the CMOS image sensor is an X-ray CMOS sensor.
7. The CMOS image sensor of claim 1 , wherein each pixel array of the plurality of pixel arrays further comprises a plurality of pixels.