Metal gate structure
View Patent ↗The metal gate structure includes at least a substrate, a dielectric layer, first and second trenches, first metal layer and second metal layers, and two cap layers. In particular, the dielectric layer is disposed on the substrate, and the first and second trenches are disposed in the dielectric layer. The width of the first trench is less than the width of the second trench. The first and second metal layers are respectively disposed in the first trench and the second trench, and the height of the first metal layer is less than or equal to the height of the second metal layer. The cap layers are respectively disposed in a top surface of the first metal layer and a top surface of the second metal layer.
1. A metal gate structure, comprising:
a substrate;
a dielectric layer, disposed on the substrate;
a first trench and a second trench, disposed in the dielectric layer, wherein the width of the first trench is less than the width of the second trench;
a first metal layer and a second metal layer, respectively disposed in the first trench and the second trench, wherein the height of the first metal layer is less than or equal to the height of the second metal layer;
a first gate dielectric layer disposed in the first trench, wherein a top surface of the first gate dielectric layer is lower than a top surface of the first metal layer;
a second gate dielectric layer disposed in the second trench, wherein a top surface of the second gate dielectric layer is lower than a top surface of the second metal layer;
two cap layers, respectively disposed on the top surface of the first metal layer and the top surface of the second metal layer; and
at least a metal compound disposed between the cap layer and the first metal layer or between the cap layer and the second metal layer.
2. The structure according to claim 1 , further comprising a first gate material layer and a second gate material layer, wherein the first gate dielectric layer, the first gate material layer and the first metal layer are sequentially disposed in the first trench, and the second gate dielectric layer, the second gate material layer and the second metal layer are sequentially disposed in the second trench.
3. The structure according to claim 1 , wherein the thickness of the cap layer in the first trench is greater than the thickness of the cap layer in the second trench.
4. The structure according to claim 1 , wherein the metal compound is a metal oxide or a metal nitride.
5. The structure according to claim 1 , wherein the metal compound is tungsten oxide, tungsten nitride or aluminum nitride.