Light emitting device on a mount with a reflective layer
View Patent ↗Embodiments of the invention include a semiconductor light emitting diode (LED) attached to a top surface of a mount. A multi-layer reflector is disposed on the top surface of the mount adjacent to the LED. The multi-layer reflector includes layer pairs of alternating layers of low index of refraction material and high index of refraction material. A portion of the top surface in direct contact with the multi-layer reflector is non-reflective.
1. A device comprising:
a semiconductor light emitting diode (LED) attached to a top surface of a mount; and
a multi-layer reflector disposed on the top surface of the mount adjacent to the LED, the multi-layer reflector comprising layer pairs of alternating layers of low index of refraction material and high index of refraction material;
a lens disposed over the LED and the multi-layer reflector; and
a layer disposed between the multi-layer reflector and the lens, wherein the layer has an index of refraction lower than the index of refraction of the lens;
wherein a portion of the top surface in direct contact with the multi-layer reflector is non-reflective.
2. The device of claim 1 wherein the portion of the top surface in direct contact with the multi-layer reflector is a metal.
3. The device of claim 1 wherein the portion of the top surface in direct contact with the multi-layer reflector is one of ceramic, plastic, and lead frame.
4. The device of claim 1 wherein the layer has an index of refraction no more than 1.3.
5. The device of claim 1 wherein the layer is selected from the group consisting of glass, fluoride glass, MgF, porous material, and porous SiO 2 .
6. The device of claim 1 further comprising a wavelength converting material disposed in the lens.
7. The device of claim 1 wherein the multi-layer reflector comprises at least one polymer layer.
8. A device comprising:
a semiconductor light emitting diode (LED) attached to a top surface of a mount;
a layer disposed on the top surface of the mount adjacent to the LED; and
a lens disposed over the LED and the layer, wherein the layer has an index of refraction lower than the index of refraction of the lens;
wherein a top surface of the LED is in direct contact with the lens.
9. The device of claim 8 wherein the layer has an index of refraction no more than 1.3 and the lens has an index of refraction of at least 1.4.
10. The device of claim 8 wherein the layer is selected from the group consisting of glass, fluoride glass, MgF, porous material, and porous SiO 2 .
11. The device of claim 8 wherein the layer is in direct contact with both the mount and the lens.
12. The device of claim 8 wherein a portion of the top surface of the mount in direct contact with the layer is non-reflective.
13. The device of claim 8 , wherein a height of a top surface of the layer is less than a height of the top surface of the LED.
14. A device comprising:
a semiconductor light emitting diode (LED) attached to metal pads disposed on a top surface of a mount; and
a multi-layer reflector disposed in direct contact with the top surface of the mount adjacent to the metal pads, the multi-layer reflector comprising layer pairs of alternating layers of low index of refraction material and high index of refraction material;
wherein a portion of the top surface of the mount in direct contact with the multi-layer reflector is non-reflective.
15. The device of claim 14 wherein the portion of the top surface of the mount in direct contact with the multi-layer reflector is one of ceramic, plastic, and lead frame.
16. The device of claim 14 further comprising a cover disposed over the LED and the multi-layer reflector.
17. The device of claim 16 further comprising a wavelength converting material disposed in the cover.
18. The device of claim 14 wherein the multi-layer reflector comprises at least one polymer layer.