Memory programming methods and memory systems
Memory programming methods and memory systems are described. One example memory programming method includes programming a plurality of main cells of a main memory and erasing a plurality of second main cells of the main memory. The memory programming method further includes first re-writing one-time programmed data within a plurality of first one-time programmed cells of a one-time programmed memory during the programming and second re-writing one-time programmed data within a plurality of second one-time programmed cells of a one-time programmed memory during the erasing. Additional method and apparatus are described.
1. A memory system comprising:
a main memory comprising a plurality of main cells configured to store a plurality of bits of main data which individually have one of a plurality of different values;
a one-time programmed memory comprising a plurality of one-time programmed cells configured to store a plurality of bits of one-time programmed data which individually have one of the different values; and
circuitry configured to re-write the same values of the bits of one-time programmed data stored in the one-time programmed cells at a plurality of moments in time.
2. The system of claim 1 wherein the one-time programmed cells are configured to store the values of the bits of one-time programmed data before the moments in time when the same values of the bits of one-time programmed data are re-written by the circuitry.
3. The system of claim 1 wherein the circuitry is configured to read the values of the bits of one-time programmed data before the re-writing of the same values of the bits of one-time programmed data.
4. The system of claim 1 wherein the values of the bits of one-time programmed data do not change during the moments in time.
5. The system of claim 1 wherein the one-time programmed cells individually have one of a plurality of different data levels which correspond to the different values, and the circuitry is configured to increase differences of the data levels of the one-time programmed cells with respect to a read level.
6. The system of claim 1 wherein the circuitry is configured to change the values of at least some of the bits of main data and to re-write the same values of the bits of one-time programmed data during the changing of the values of the at least some of the bits of main data.
7. The system of claim 1 wherein the circuitry is configured to automatically re-write the same values of the bits of one-time programmed data in the absence of user instructions which instruct the re-writing.
8. The system of claim 1 wherein the circuitry is configured to assert a word line, to change the values of at least some of the bits of main data stored in the main cells which are coupled with the asserted word line, and to re-write the same values of the bits of one-time programmed data stored in at least some of the one-time programmed cells which are coupled with the asserted word line.
9. The system of claim 1 wherein the main cells and the one-time programmed cells are the same type of memory cells.
10. A memory system comprising:
a main memory comprising a plurality of main cells configured to store a plurality of bits of main data individually having different first and second values at different moments in time;
a one-time programmed memory comprising a plurality of first one-time programmed cells which are configured to store a plurality of bits of one-time programmed data having the first value and a plurality of second one-time programmed cells which are configured to store a plurality of bits of one-time programmed data having the second value; and
circuitry configured to provide, at a plurality of moments in time, a plurality of first signals to the first one-time programmed cells to retain the storage of the bits of one-time programmed data having the first value in the first one-time programmed cells and a plurality of second signals to the second one-time programmed cells to retain the storage of the bits of one-time programmed data having the second value in the second one-time programmed cells.
11. The system of claim 10 wherein the first and second values of the bits of one-time programmed data do not change during the moments in time.
12. The system of claim 10 wherein the first and second one-time programmed cells individually have one of a plurality of different data levels which correspond to the first and second values, and the circuitry is configured to increase differences of the data levels of the first and second one-time programmed cells with respect to a read level.
13. The system of claim 10 wherein the circuitry is configured to change the values of at least some of the bits of main data and to provide the first and second signals during the changing of the values of the at least some of the bits of main data.
14. The system of claim 10 wherein the circuitry is configured to automatically provide the first and second signals in the absence of user instructions which instruct the provision of the first and second signals.
15. The system of claim 10 wherein the main cells and the one-time programmed cells are the same type of memory cells.
16. A memory system comprising:
a main memory comprising a plurality of main cells configured to store a plurality of bits of main data individually having one of a plurality of different values;
a one-time programmed memory comprising a plurality of one-time programmed cells configured to store a plurality of bits of one-time programmed data individually having one of the different values;
wherein the main cells and the one-time programmed cells are individually configured to have different data levels which correspond to the different values of the bits of main data and the bits of one-time programmed data; and
circuitry configured to, at a plurality of moments in time, increase differences of the data levels of the one-time programmed cells with respect to a read level.
17. The system of claim 16 wherein the read level is between a first range of the data levels which correspond to a first value of the bits of main data and the bits of one-time programmed data and a second range of the data levels which correspond to a second value of the bits of main data and the bits of one-time programmed data.
18. The system of claim 16 wherein the circuitry is configured to re-write the values of the bits of one-time programmed data to increase the differences of the data levels of the one-time programmed cells with respect to the read level.
19. The system of claim 16 wherein the circuitry is configured to increase the data levels of the one-time programmed cells which store the bits of one-time programmed data having a first value and to decrease the data levels of the one-time programmed cells which store the bits of one-time programmed data having a second value.
20. The system of claim 16 wherein the data levels of the one-time programmed cells become indeterminate with respect to the read level over time in the absence of the increasing by the circuitry.
21. The system of claim 16 wherein the circuitry is configured to increase the differences of the data levels of the one-time programmed cells to enable the values of the bits of one-time programmed data to be read.
22. The system of claim 16 wherein the circuitry is configured to compare the data levels of the one-time programmed cells with respect to the read level to read the values of the bits of one-time programmed data.
23. A memory programming method comprising:
using a plurality of main cells of a main memory of a memory system, storing a plurality of bits of main data individually having one of a plurality of different values;
using a plurality of one-time programmed cells of a one-time programmed memory of the memory system, storing a plurality of bits of one-time programmed data individually having one of the different values; and
at a plurality of moments in time, re-writing the values of the bits of one-time programmed data which are stored using the one-time programmed cells of the one-time programmed memory.
24. The method of claim 23 further comprising performing operations with respect to the storing of the bits of main data using the main cells, and wherein the re-writing comprises re-writing responsive to the performing operations.
25. The method of claim 23 wherein the plural moments in time occur after the storing the bits of one-time programmed data.
26. The method of claim 23 wherein the values of the one-time programmed bits do not change during the moments in time.
27. The method of claim 23 wherein the re-writing increases differences of a plurality of data levels of the one-time programmed cells with respect to a read level which is used to distinguish between the different values of the bits of one-time programmed data.
28. The method of claim 23 wherein the re-writing comprises automatically re-writing the values of the bits of one-time programmed data in the absence of user instructions which instruct the re-writing.
29. The method of claim 23 further comprising:
asserting a word line coupled with some of the main cells;
during the asserting, changing the values of at least some of the bits of main data stored using the some of the main cells; and
wherein the re-writing comprises, during the asserting, re-writing the values of the bits of one-time programmed data which are stored using the one-time programmed cells which are coupled with the word line.
30. The method of claim 23 wherein the main cells and the one-time programmed cells are the same type of memory cells.
31. A memory programming method comprising:
using a plurality of main cells of a main memory of a memory system, storing a plurality of bits of main data individually having one of a plurality of different values;
using a plurality of one-time programmed cells of a one-time programmed memory of the memory system, storing a plurality of bits of one-time programmed data individually having one of the different values; and
at a plurality of moments in time, providing a plurality of signals to the one-time programmed cells to maintain the storage of the values of the bits of one-time programmed data using the one-time programmed cells.
32. The method of claim 31 wherein the plural moments in time occur after the storing the bits of one-time programmed data using the one-time programmed cells.
33. The method of claim 31 wherein the values of the one-time programmed bits do not change after the storing.
34. The method of claim 31 wherein the providing the signals increases differences of data levels of the one-time programmed cells with respect to a read level which is used to distinguish between the different values of the bits of one-time programmed data.
35. The method of claim 31 wherein the main cells and the one-time programmed cells are the same type of memory cells.