Film-forming composition and method for fabricating film by using the same
A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.
1. A film-forming composition comprising:
a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine,
wherein the 3-intracyclic cyclopentadienyl precursor is represented by the following formula 1,
wherein M is selected from the group consisting of Zr, Hf, and Ti.
2. The film-forming composition of claim 1 , wherein the dimethyethylamine is included in the composition in an amount of 1 to 99 wt % based on the total amount of the composition.
3. The film-forming composition of claim 1 , wherein the precursor and the dimethyethylamine have a weight ratio of 1:99 to 99:1.
4. A method for fabricating a film comprising:
depositing a film-forming composition over a substrate to form a film,
wherein the film-forming composition comprises a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine,
wherein the 3-intracyclic cyclopentadienyl precursor is represented by the following formula 1,
wherein M is selected from the group consisting of Zr, Hf, and Ti.
5. The method of claim 4 , wherein the film is deposited by Atomic Layer Deposition.
6. The method of claim 5 , wherein the depositing of the film includes:
preparing a liquid-phase composition by dissolving the precursor in the dimethyethylamine,
placing a substrate in a chamber, and
introducing the liquid-phase composition into the chamber through Liquid Delivery System.
7. The method of claim 6 , wherein the depositing of the film further includes vaporizing the liquid-phase composition, and
wherein the introducing of the liquid-phase composition includes introducing the vaporized liquid-phase composition into the chamber.
8. The method of claim 4 , wherein the dimethyethylamine is included in an amount of 1 to 99 wt % based on the total amount of the film-forming composition.
9. The method of claim 4 , wherein the precursor and the dimethyethylamine has a weight ratio of 1:99 to 99:1.
10. A method for fabricating a film comprising:
preparing a liquid-phase metal precursor by dissolving a 3-intracyclic cyclopentadienyl metal precursor in dimethyethylamine, wherein the 3-intracyclic cyclopentadienyl metal precursor is represented by the following formula 1,
wherein M is selected from the group consisting of Zr, Hf, and Ti;
vaporizing the liquid-phase metal precursor and introducing the vaporized metal precursor into a chamber with a substrate;
adsorbing the vaporized metal precursor over the substrate; and
feeding a reactant reactable with the adsorbed metal precursor to form a metal-containing film over the substrate.
11. The method of claim 10 , wherein the metal-containing film comprises a metal selected from the group consisting of Zr, Ti, Hf, an oxide of the metal, and a nitride of the metal.
12. The method of claim 10 ,
wherein the forming of the metal-containing film is performed by atomic layer deposition or chemical vapor deposition.