Display device and method of manufacturing the same

1. A display device, comprising:

a display part that displays an image; and

a touch part on the display part, the touch part including:

a first conductive layer on the display part;

a lower inorganic layer on the first conductive layer;

an upper inorganic layer covering the lower inorganic layer; and

a second conductive layer on the upper inorganic layer,

wherein the upper inorganic layer includes substantially a same material as the lower inorganic layer, and

the upper inorganic layer has a hydrogen atomic percent less than a hydrogen atomic percent of the lower inorganic layer.

2. The display device as claimed in claim 1 , wherein the hydrogen atomic percent of the upper inorganic layer is greater than 0 and less than or equal to about 20.

3. The display device as claimed in claim 2 , wherein the upper inorganic layer includes silicon nitride.

4. The display device as claimed in claim 3 , wherein the second conductive layer includes copper.

5. The display device as claimed in claim 2 , wherein the lower inorganic layer has a breakdown voltage equal to or greater than about 5 MV/cm.

6. The display device as claimed in claim 5 , wherein the lower inorganic layer has a thickness greater than a thickness of the upper inorganic layer.

7. The display device as claimed in claim 1 , wherein:

the display part includes:

a base substrate;

an organic light emitting diode on the base substrate; and

a thin film encapsulation layer on the base substrate, the thin film encapsulation layer covering the organic light emitting diode and including an inorganic material, and

the first conductive layer is directly on the thin film encapsulation layer.

8. The display device as claimed in claim 7 , wherein:

the first conductive layer includes first touch electrodes on the thin film encapsulation layer, the first touch electrodes extending in a first direction and being arranged in a second direction crossing the first direction, and

the second conductive layer includes second touch electrodes respectively crossing the first touch electrodes and insulated from the first touch electrodes by the upper inorganic layer and the lower inorganic layer.

9. The display device as claimed in claim 8 , wherein:

each of the first touch electrodes includes first sensing parts arranged in the first direction and spaced apart from each other, and first connection parts, each of the first connection parts being between the first sensing parts to connect two first sensing parts adjacent to each other among the first sensing parts, and

each of the second touch electrodes includes second sensing parts arranged in the second direction and spaced apart from each other, and second connection parts, each of the second connection parts being between the second sensing parts to connect two second sensing parts adjacent to each other among the second sensing parts.

10. The display device as claimed in claim 7 , wherein:

the first conductive layer includes:

first sensing parts on the thin film encapsulation layer, the first sensing parts being arranged in a first direction and spaced apart from each other;

connection parts on the thin film encapsulation layer and extending in the first direction, each connection part connecting two first sensing parts adjacent to each other among the first sensing parts; and

second sensing parts on the thin film encapsulation layer, the second sensing parts being arranged in a second direction crossing the first direction, spaced apart from each other, and insulated from the first sensing parts and the connection parts,

wherein the second conductive layer includes bridge electrodes on the upper and lower inorganic layers, and

wherein each of the bridge electrodes connecting two second sensing parts adjacent to each other among the second sensing parts through a thru-hole defined through the upper inorganic layer and the lower inorganic layer.

11. A method of manufacturing a display device, the method comprising:

providing a display panel;

forming a first electrode layer on the display panel;

forming an insulating layer including silicon nitride on the first electrode layer; and

forming a second conductive layer on the insulating layer, forming the insulating layer including:

supplying a first gas on the first conductive layer to form a lower insulating layer; and

supplying a second gas on the lower insulating layer to form an upper insulating layer, and

wherein the first gas includes silane, nitrogen, ammonia, and hydrogen, and the second gas includes silane, nitrogen, and hydrogen.

12. The method as claimed in claim 11 , wherein the second gas is obtained by substantially removing ammonia from the first gas.

13. The method as claimed in claim 12 , wherein:

the lower insulating layer has a hydrogen atomic percent exceeding about 20, the hydrogen atomic percent of the lower insulating layer being greater than the hydrogen atomic percent of the upper insulating layer, and

the upper insulating layer has a hydrogen atomic percent that is greater than 0 and equal to or less than about 20.

14. The method as claimed in claim 11 , wherein forming the insulating layer is performed at a temperature less than or equal to about 85° C.

15. The method as claimed in claim 14 , wherein an amount of hydrogen in the first gas is greater than about three times an amount of nitrogen in the second gas.

16. The method as claimed in claim 15 , wherein an amount of silane in the second gas is less than an amount of silane in the first gas.

17. The method as claimed in claim 11 , wherein the display panel includes:

a base substrate;

an organic light emitting diode on the base substrate; and

a thin film encapsulation layer covering the organic light emitting diode, the first conductive layer being formed directly on the thin film encapsulation layer.

18. The method as claimed in claim 17 , wherein:

forming the second conductive layer is performed by a wet etching process using an etching solution, and

an etching rate of the upper insulating layer against is about 3 Å/s.

19. The method as claimed in claim 18 , wherein:

forming the first conductive layer includes forming first electrodes on the thin film encapsulation layer such that the first electrodes extend in a first direction and are arranged in a second direction crossing the first direction, and

forming the second conductive layer includes forming second electrodes on the upper insulating layer to cross the first electrodes.

20. The method as claimed in claim 18 , wherein:

the first conductive layer includes first electrodes on the thin film encapsulation layer, the first electrodes extending in a first direction and being arranged in a second direction crossing the first direction, and second electrodes being between the first electrodes, the second electrodes being spaced apart from each other in the second direction, and

forming the second conductive layer includes:

forming thru-holes through the upper insulating layer and the lower insulating layer; and

forming connection electrodes on the upper insulating layer, the connection electrodes connecting the second electrodes through the thru-holes.