Method of processing substrate, substrate processing apparatus, and recording medium

1. A method of processing a substrate having an insulating film and a conductive film, which are exposed on a surface of the substrate, comprising:

selectively growing a laminated film on the conductive film by alternately performing a predetermined of times:

growing a first layer including a first element and a second element by supplying a first precursor containing the first element and a second precursor containing the second element to the substrate; and

growing a second layer including the second element and a third element by supplying the second precursor and a third precursor containing the third element to the substrate,

wherein the conductive film contains at least one selected from a group consisting of a metal element, a semi-metal element, and a semiconductor element,

wherein in the act of selectively growing the laminated film, the act of growing the first layer is performed before the act of growing the second layer, and the first layer and the second layer are laminated to form the laminated film,

wherein the first element is antimony, the second element is tellurium, and the third element is germanium,

wherein, when the act of growing the first layer is performed for the first time, the first layer is selectively grown on the conductive film, and when the act of growing the second layer is performed for the first time, the second layer is selectively grown on the first layer, and

wherein the act of selectively growing the laminated film includes growing the laminated film as a superlattice by adjusting a thickness of the laminated film, a ratio of the first precursor and the second precursor, and a ratio of the second precursor and the third precursor.

2. The method of claim 1 , wherein the first precursor contains at least one selected from a group consisting of an alkyl group and an amino group, the second precursor contains an alkyl group, and the third precursor contains at least one selected from a group consisting of an amino group and an amidine group.

3. The method of claim 1 , wherein the first precursor contains an alkyl group, the second precursor contains an alkyl group, and the third precursor contains an amidine group.

4. The method of claim 1 , wherein when the act of growing the first layer is performed for the second time and thereafter, the first layer is selectively grown on the second layer, and

when the act of growing the second layer is performed for the second time and thereafter, the second layer is selectively grown on the first layer.

5. The method of claim 1 , wherein a concave portion is formed on the surface of the substrate,

the conductive film is exposed on a lower surface of the concave portion,

the insulating film is exposed on a side surface of the concave portion, and

the laminated film is selectively grown on the lower surface of the concave portion.

6. The method of claim 5 , wherein the laminated film is grown from the lower surface of the concave portion in a bottom-up manner.

7. The method of claim 5 , wherein when the act of growing the first layer is performed for the first time, the first layer is selectively grown on the lower surface of the concave portion, and

when the act of growing the second layer is performed for the first time, the second layer is selectively grown on the first layer.

8. The method of claim 7 , wherein, when the act of growing the first layer is performed for the second time and thereafter, the first layer is selectively grown on the second layer, and

when the act of growing the second layer is performed for the second time and thereafter, the second layer is selectively grown on the first layer.

9. The method of claim 1 , wherein the laminated film is a nano-laminated film composed of the first layer and the second layer alternately laminated at a nano scale thickness.

10. The method of claim 1 , further comprising chemical-mechanical polishing an upper surface of the laminated film.