Method for manufacturing back contact solar cells

1. A method for manufacturing back contact solar cells, comprising steps of:

(a) providing a silicon substrate doped with phosphorus, the substrate comprising a front, sunward facing, surface and a rear surface;

(b) subsequent to the step (a), doping the front surface and the rear surface of the substrate homogeneously with boron in a first pattern, thereby forming a front side p+ region on the front surface of the silicon substrate and a rear side p+ region on the rear surface of the silicon substrate, wherein the first pattern is a blanket pattern;

(c) subsequent to the step (b), forming a silicon dioxide layer on the front surface and the rear surface;

(d) subsequent to the step (c), depositing a phosphorus-containing doping paste on the silicon dioxide layer of the rear surface in a second pattern, wherein the phosphorus-containing doping paste comprising a phosphorus compound and a solvent;

(e) subsequent to the step (d), heating the silicon substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period in order to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming a rear side n+ region on the rear surface of the silicon substrate beneath the phosphorus-containing doping paste; and

(f) subsequent to the step (e), removing the silicon dioxide layer from the silicon substrate.

2. A method of claim 1 , wherein the front surface and the rear surface of the substrate is homogenously doped with boron in the step (b) by a process selected from the group consisting of ion implantation of boron, BBr 3 diffusion, BCl 3 diffusion, and BSG deposition using chemical vapor deposition.

3. A method of claim 2 , wherein the front surface and the rear surface of the substrate is homogenously doped with boron in the step (b) by exposing the substrate to a BBr 3 -containing ambient.

4. A method of claim 3 , wherein the BBr 3 -containing ambient comprises BBr 3 , N 2 and O 2 .

5. A method of claim 2 , wherein a borosilicate glass (BSG) layer is formed on top of the p+ regions in the step (b) and wherein the BSG layer is stripped off prior to the step (c).

6. A method of claim 1 , wherein the silicon dioxide layer is formed by a method selected from the group consisting of (i) thermal oxidation, (ii) depositing a liquid composition comprising silicon dioxide particles, (iii) chemical vapor deposition, (iv) chemical oxidation, (v) steam oxidation, (vi) printing and oxidizing a composition comprising of silicon particles, and (vii) growing and oxidizing a porous silicon layer.

7. A method of claim 1 , wherein the thickness of the silicon dioxide layer is between 10 nm and 100 nm.

8. A method of claim 1 , wherein the rear side p+ region and the rear side n+ region on the rear surface collectively form an interdigitated pattern.

9. A method of claim 1 , further comprising steps of:

(g) subsequent to the step (f), forming a passivation layer on both the front surface and the rear surface; and

(h) subsequent to the step (g), forming a first electrode and a second electrode on the rear surface, wherein the first electrode is in electric contact with the rear side p+ region on the rear surface of the silicon substrate and wherein the second electrode is in electric contact with the rear side n+ region on the rear surface of the silicon substrate.

10. A method of claim 9 , wherein the passivation layer comprises a first passivation layer and a second passivation layer formed on the first passivation layer, wherein the first passivation layer consists of silicon oxide or aluminum oxide and wherein the second passivation layer consists of silicon nitride.

11. A method of claim 9 , wherein the first electrode and the second electrode are formed by screen printing and firing a paste containing silver powder.

12. A method of claim 1 , wherein the drive-in temperature is 850-1000° C. and wherein the drive-in ambient is nitrogen, oxygen, or mixture thereof.