Apparatuses including electrodes having a conductive barrier material and methods of forming same
View Patent ↗Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.
1. A method of manufacturing a memory cell, comprising:
forming a first chalcogenide structure;
forming a first electrode portion over the first chalcogenide structure;
forming an electrically conductive barrier material over the first electrode portion;
forming a second electrode portion over the electrically conductive barrier material; and
forming a second chalcogenide structure over the second electrode portion, wherein the second electrode portion is disposed between the second chalcogenide structure and the electrically conductive barrier material.
2. The method of claim 1 , wherein the first chalcogenide structure, the first electrode portion, the barrier material, the second electrode portion, and the second chalcogenide structure together define a stack with a substantially uniform cross section.
3. The method of claim 1 , wherein the electrically conductive barrier material has a larger cross section than at least one of the first and second electrode portions.
4. The method of claim 1 , wherein the first chalcogenide structure is formed over a first access line and a first access line electrode is disposed between the first access line and the first chalcogenide structure.
5. The method of claim 4 , further comprising forming a second access line electrode over the second chalcogenide structure and a second access line over the second access line electrode.
6. The method of claim 1 , wherein the barrier material comprises silicon, and the barrier material is formed in situ with the second electrode portion.
7. The method of claim 6 , wherein the first electrode portion is formed in situ with the barrier material and the second electrode portion.
8. The method of claim 1 , wherein the barrier material is formed by one of physical vapor deposition, chemical vapor deposition, or atomic layer deposition.
9. A method of preventing diffusion between a switch and a phase change memory storage element in a stacked memory cell, comprising:
partitioning an electrode disposed between the switch and the phase change memory storage element into first and second portions; and
forming an electrically conductive barrier material between the first and second portions of the electrode, wherein the electrically conductive barrier material does react with either the first or second portions of the electrode.
10. The method of claim 9 , wherein the electrically conductive barrier material has a substantially different crystalline structure than the first and second portions of the electrode.
11. The method of claim 9 , wherein the first and second portions of the electrode are at least partially columnar and the electrically conductive barrier material is amorphous.
12. A method of preventing diffusion between a switch and a phase change memory storage element in a stacked memory cell, comprising:
partitioning an electrode disposed between the switch and the phase change memory storage element into first and second portions; and
forming an electrically conductive barrier material between the first and second portions of the electrode, wherein the electrically conductive barrier material is a first portion of electrically conductive barrier material, the electrode is partitioned into first, second, and third portions, and a second portion of electrically conductive barrier material is disposed between the second and third portions of the electrode.
13. The method of claim 9 , wherein the electrically conductive harrier material is one of titanium nitride, tungsten silicide, silicon, or combinations thereof.
14. A method, comprising:
forming a switch wherein forming the switch comprises:
forming a first chalcogenide structure;
forming a phase change material storage element, wherein forming the phase change material storage element comprises:
forming a second chalcogenide structure: and
forming a second electrode, wherein the second electrode is disposed between the second chalcogenide structure and the electrically conductive barrier material; and
forming an electrically conductive barrier material between the switch and the phase change material storage element.
15. The method of claim 14 , wherein forming the switch further comprises:
forming a first electrode over at least a portion of the first chalcogenide structure, wherein the first electrode is disposed between the first chalcogenide structure and the electrically conductive barrier material.
16. The method of claim 14 , wherein the electrically conductive barrier material is one of titanium nitride, tungsten silicide, silicon, or combinations thereof.
17. The method of claim 14 , wherein forming an electrically conductive barrier material between the switch and phase change material comprises:
forming in situ the electrically conductive barrier material, a first electrode, and a second electrode, wherein the first electrode is disposed between at least a portion of the switch and the electrically conductive harrier material, and wherein the second electrode is disposed between at least a portion of the phase change material storage element and the electrically conductive barrier material.
18. The method of claim 14 , further comprising:
forming first and second access lines, wherein the switch, electrically conductive barrier material, and the phase change material storage element are disposed between the first and second access lines.