Optoelectronic element
An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
1. An optoelectronic element comprising:
an optoelectronic unit having a virtual central line in a top view, a side surface, a top surface, and a bottom surface;
a first metal layer having a first extension portion;
a second metal layer formed on the top surface, and having a second extension portion crossing over the virtual central line and extending to the first metal layer;
a transparent structure covering the side surface and the bottom surface without covering the top surface; and
an optical layer covering the first extension portion, the second extension portion, and the transparent structure.
2. The optoelectronic element of claim 1 , further comprising a passivation layer formed on the second extension portion without covering a side surface of the second metal layer.
3. The optoelectronic element of claim 1 , wherein the optical layer comprises epoxy or silicone.
4. The optoelectronic element of claim 2 , wherein the passivation layer has a side surface covered by the optical layer.
5. The optoelectronic element of claim 1 , further comprising a conductive layer directly contacting the first metal layer.
6. The optoelectronic element of claim 5 , wherein the conductive layer overlaps the first extension portion and the second extension portion.
7. The optoelectronic element of claim 5 , wherein the transparent structure has a portion overlapping the conductive layer.
8. The optoelectronic element of claim 1 , wherein the transparent structure comprises a transparent layer and a wavelength-converting layer.
9. The optoelectronic element of claim 8 , wherein the wavelength-converting layer comprises quantum dot or phosphor.
10. The optoelectronic element of claim 1 , wherein the first extension portion crosses over the virtual central line and extends toward the second metal in the top view.
11. The optoelectronic element of claim 1 , wherein the transparent structure has a flat bottom surface.
12. The optoelectronic element of claim 1 , wherein the second metal layer comprises a base portion wider than the extension portion.
13. The optoelectronic element of claim 1 , wherein the optical layer comprises a plurality of particles.