Light-emitting device and driving method
In a light emitting device, luminance irregularities caused by fluctuation in threshold of TFTs for supplying a current to EL elements among pixels hinder the light emitting device from improving the image quality. A voltage equal to the threshold of a TFT 110 is held in capacitor means 111 in advance. When a video signal is inputted from a source signal line, the voltage held in the capacitor means is added to the signal, which is then applied to a gate electrode of the TFT 110 . Even when threshold is fluctuated among pixels, each threshold is held in the capacitor means 111 of each pixel, and therefore, influence of the threshold fluctuation can be removed. Since the threshold is stored in the capacitor means 111 alone and the voltage between two electrodes is not changed while a video signal is written, fluctuation in capacitance value has no influence.
1. A semiconductor device comprising:
a first line, a second line, a third line, a fourth line, a fifth line, and a sixth line;
a first transistor comprising a first gate, a first source, and a first drain, wherein one of the first source and the first drain is directly connected to the first line, and the first gate is directly connected to the second line;
a second transistor comprising a second gate, a second source, and a second drain, wherein the second gate is directly connected to the third line, and one of the second source and the second drain is directly connected to the fourth line;
a third transistor comprising a third gate, a third source, and a third drain, wherein the third gate is electrically connected to the other of the first source and the first drain, and one of the third source and the third drain is directly connected to the other of the second source and the second drain;
a fourth transistor comprising a fourth gate, a fourth source, and a fourth drain, wherein the fourth gate is directly connected to the fifth line, one of the fourth source and the fourth drain is directly connected to the other of the third source and the third drain, and the other of the fourth source and the fourth drain is directly connected to the sixth line;
a first capacitor comprising a first electrode and a second electrode, wherein the first electrode is directly connected to the other of the second source and the second drain;
a second capacitor comprising a third electrode and a fourth electrode, wherein the third electrode is directly connected to the third gate, and the fourth electrode is electrically connected to the other of the second source and the second drain; and
an electroluminescence element directly connected to the other of the second source and the second drain,
wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor is an n-channel transistor, and
wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprises a channel region which comprises polycrystalline silicon.
2. The semiconductor device according to claim 1 , further comprising:
a seventh line; and
a fifth transistor comprising a fifth gate, a fifth source, and a fifth drain, wherein the fifth gate is directly connected to the seventh line, one of the fifth source and the fifth drain is directly connected to the third gate, and the other of the fifth source and the fifth drain is directly connected to the other of the third source and the third drain.
3. The semiconductor device according to claim 1 , further comprising:
a seventh line; and
a fifth transistor comprising a fifth gate, a fifth source, and a fifth drain, wherein the fifth gate is directly connected to the seventh line, one of the fifth source and the fifth drain is directly connected to the other of the first source and the first drain, and the other of the fifth source and the fifth drain is directly connected to the other of the second source and the second drain.
4. The semiconductor device according to claim 1 , further comprising:
a seventh line;
a fifth transistor comprising a fifth gate, a fifth source, and a fifth drain, wherein the fifth gate is directly connected to the seventh line, one of the fifth source and the fifth drain is directly connected to the third gate, and the other of the fifth source and the fifth drain is directly connected to the other of the third source and the third drain; and
a sixth transistor comprising a sixth gate, a sixth source, and a sixth drain, wherein the sixth gate is directly connected to the seventh line, one of the sixth source and the sixth drain is directly connected to the other of the first source and the first drain, and the other of the sixth source and the sixth drain is directly connected to the other of the second source and the second drain.
5. The semiconductor device according to claim 1 , wherein the second electrode is directly connected to the other of the first source and the first drain.
6. The semiconductor device according to claim 1 , wherein the fourth electrode is directly connected to the other of the first source and the first drain.
7. An electric apparatus comprising:
the semiconductor device according to claim 1 ; and
at least one of a speaker, a display, an antenna, an audio input portion, and an operation keys.
8. A module comprising:
the semiconductor device according to claim 1 ; and
a flexible printed circuit.
9. A semiconductor device comprising:
a first line, a second line, a third line, a fourth line, a fifth line, and a sixth line;
a first transistor comprising a first gate, a first source, and a first drain, wherein one of the first source and the first drain is electrically connected to the first line, and the first gate is directly connected to the second line;
a second transistor comprising a second gate, a second source, and a second drain, wherein the second gate is directly connected to the third line, and one of the second source and the second drain is electrically connected to the fourth line;
a third transistor comprising a third gate, a third source, and a third drain, wherein the third gate is electrically connected to the other of the first source and the first drain, and one of the third source and the third drain is electrically connected to the other of the second source and the second drain;
a fourth transistor comprising a fourth gate, a fourth source, and a fourth drain, wherein the fourth gate is directly connected to the fifth line, one of the fourth source and the fourth drain is electrically connected to the other of the third source and the third drain, and the other of the fourth source and the fourth drain is electrically connected to the sixth line;
a first capacitor comprising a first electrode and a second electrode, wherein the first electrode is electrically connected to the other of the second source and the second drain;
a second capacitor comprising a third electrode and a fourth electrode, wherein the third electrode is directly connected to the third gate, and the fourth electrode is electrically connected to the other of the second source and the second drain; and
an electroluminescence element electrically connected to the other of the second source and the second drain,
wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor is an n-channel transistor, and
wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprises a channel region which comprises polycrystalline silicon.
10. The semiconductor device according to claim 9 , further comprising:
a seventh line; and
a fifth transistor comprising a fifth gate, a fifth source, and a fifth drain, wherein the fifth gate is directly connected to the seventh line, one of the fifth source and the fifth drain is directly connected to the third gate, and the other of the fifth source and the fifth drain is directly connected to the other of the third source and the third drain.
11. The semiconductor device according to claim 9 , further comprising:
a seventh line; and
a fifth transistor comprising a fifth gate, a fifth source, and a fifth drain, wherein the fifth gate is directly connected to the seventh line, one of the fifth source and the fifth drain is directly connected to the other of the first source and the first drain, and the other of the fifth source and the fifth drain is directly connected to the other of the second source and the second drain.
12. The semiconductor device according to claim 9 , further comprising:
a seventh line;
a fifth transistor comprising a fifth gate, a fifth source, and a fifth drain, wherein the fifth gate is directly connected to the seventh line, one of the fifth source and the fifth drain is directly connected to the third gate, and the other of the fifth source and the fifth drain is directly connected to the other of the third source and the third drain; and
a sixth transistor comprising a sixth gate, a sixth source, and a sixth drain, wherein the sixth gate is directly connected to the seventh line, one of the sixth source and the sixth drain is directly connected to the other of the first source and the first drain, and the other of the sixth source and the sixth drain is directly connected to the other of the second source and the second drain.
13. The semiconductor device according to claim 9 , wherein the second electrode is directly connected to the other of the first source and the first drain.
14. The semiconductor device according to claim 9 , wherein the fourth electrode is directly connected to the other of the first source and the first drain.
15. An electric apparatus comprising:
the semiconductor device according to claim 9 ; and
at least one of a speaker, a display, an antenna, an audio input portion, and an operation keys.
16. A module comprising:
the semiconductor device according to claim 9 ; and
a flexible printed circuit.