Imaging device having a third circuit with a region overlapping with a fourth circuit
An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit.
1. An imaging device comprising:
a first region to an n-th region (n is a natural number of 2 or more and 16 or less); and
a first circuit, a second circuit, a third circuit, and a fourth circuit in each of the first region to the n-th region,
wherein the first to third circuits each include a transistor including silicon in a channel formation region,
wherein the fourth circuit includes a photoelectric conversion element and a transistor including an oxide semiconductor in a channel formation region,
wherein the first circuit is configured to read out a first signal from the third circuit,
wherein the second circuit is configured to output a second signal for driving the fourth circuit,
wherein the third circuit is configured to process a third signal output from the fourth circuit,
wherein the fourth circuit is configured to convert light into the third signal,
wherein the first circuit includes a region overlapping with the fourth circuit, and
wherein the third circuit includes a region overlapping with the fourth circuit.
2. The imaging device according to claim 1 , wherein the oxide semiconductor includes In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).
3. The imaging device according to claim 1 , wherein the photoelectric conversion element includes selenium.
4. The imaging device according to claim 1 , wherein the first circuit and the second circuit each include a shift register circuit and a buffer circuit.
5. The imaging device according to claim 1 , wherein the third circuit includes a correlated double sampling circuit, an analog-to-digital converter circuit, and a latch circuit.
6. The imaging device according to claim 1 , wherein the first circuit is divided and positioned in two regions.
7. The imaging device according to claim 1 , wherein the second circuit is divided and positioned in two regions.
8. The imaging device according to claim 1 ,
wherein the first circuit, the second circuit, and the third circuit are in a first layer,
wherein the transistor included in the fourth circuit is in a second layer,
wherein the photoelectric conversion element is in a third layer, and
wherein the second layer is between the first layer and the third layer.
9. An electronic device comprising:
the imaging device according to claim 1 ; and
a display device.
10. An imaging device comprising a pixel portion, the imaging device comprising:
a first circuit, a second circuit, a third circuit, and a fourth circuit,
wherein the first to third circuits each include a transistor including silicon in a channel formation region,
wherein the pixel portion includes the fourth circuit,
wherein the fourth circuit includes a photoelectric conversion element and a transistor including an oxide semiconductor in a channel formation region,
wherein the first circuit is configured to read out a first signal from the third circuit,
wherein the second circuit is configured to output a second signal for driving the fourth circuit,
wherein the third circuit is configured to process a third signal output from the fourth circuit,
wherein the fourth circuit is configured to convert light into the third signal,
wherein the first circuit includes a region overlapping with the pixel portion, and
wherein the third circuit includes a region overlapping with the pixel portion.
11. The imaging device according to claim 10 , wherein the oxide semiconductor includes In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).
12. The imaging device according to claim 10 , wherein the photoelectric conversion element includes selenium.
13. The imaging device according to claim 10 , wherein the first circuit and the second circuit each include a shift register circuit and a buffer circuit.
14. The imaging device according to claim 10 , wherein the third circuit includes a correlated double sampling circuit, an analog-to-digital converter circuit, and a latch circuit.
15. The imaging device according to claim 10 , wherein the first circuit is divided and positioned in two regions.
16. The imaging device according to claim 10 , wherein the second circuit is divided and positioned in two regions.
17. The imaging device according to claim 10 ,
wherein the first circuit, the second circuit, and the third circuit are in a first layer,
wherein the transistor included in the fourth circuit is in a second layer,
wherein the photoelectric conversion element is in a third layer, and
wherein the second layer is between the first layer and the third layer.
18. An electronic device comprising:
the imaging device according to claim 10 ; and
a display device.