Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising forming a film on a substrate accommodated in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

(a-1) supplying a precursor gas to the substrate in the process chamber;

(a-2) exhausting the precursor gas and a first purge gas from the process chamber;

(b-1) supplying an oxygen-containing gas to the substrate in the process chamber;

(b-2) exhausting the oxygen-containing gas and a second purge gas from the process chamber;

(c-1) supplying a hydrogen-containing gas to the substrate in the process chamber; and

(c-2) exhausting the hydrogen-containing gas and a third purge gas from the process chamber,

wherein an exhausted gas amount in each of (b-2) and (c-2) is set greater than an exhaust gas amount in (a-2), an exhaust rate in each of (b-2) and (c-2) is set greater than an exhaust rate in (a-2), or the exhausted gas amount and the exhaust rate in each of (b-2) and (c-2) are respectively set greater than the exhausted gas amount and the exhaust rate in (a-2),

wherein an amount of the second purge gas or an amount of the third purge gas is greater than an amount of the first purge gas,

wherein the precursor gas is supplied through a first nozzle installed in the process chamber, the oxygen-containing gas is supplied through a second nozzle installed in the process chamber, the second nozzle being different from the first nozzle, and the hydrogen-containing gas is supplied through the second nozzle, and

wherein the first purge gas is supplied through the first nozzle and the second purge gas and the third purge gas are supplied through the second nozzle during (a-2), (b-2) and (c-2), respectively.

2. The method of claim 1 , wherein a gas exhaust time in each of (b-2) and (c-2) is set longer than a gas exhaust time in (a-2).

3. The method of claim 1 , wherein

(a-2) includes supplying the first purge gas into the process chamber,

(b-2) includes supplying the second purge gas into the process chamber,

(c-2) includes supplying the third purge gas into the process chamber, and

each of a supply flow rate of the second purge gas and a supply flow rate of the third purge gas is set greater than a supply flow rate of the first purge gas.

4. The method of claim 1 , wherein

each of (b-2) and (c-2) includes non-simultaneously performing a set a preset number of times, the set comprising:

exhausting an interior of the process chamber substantially without supplying a gas into the process chamber; and

supplying the second or third purge gas into the process chamber, and

(a-2) includes supplying the first purge gas into the process chamber.

5. The method of claim 1 , wherein in the act of forming the film, (b-1), (b-2), (c-1), and (c-2) are successively performed in the named order, and

the exhausted gas amount in (b-2) is set greater than the exhausted gas amount in (c-2), the exhaust rate in (b-2) is set greater than the exhaust rate in (c-2), or the exhausted gas amount and the exhaust rate in (b-2) are respectively set greater than the exhausted gas amount and the exhaust rate in (c-2).

6. The method of claim 5 , wherein a gas exhaust time in (b-2) is set longer than a gas exhaust time in (c-2).

7. The method of claim 5 , wherein

(b-2) includes supplying the second purge gas into the process chamber,

(c-2) includes supplying the third purge gas into the process chamber, and

a supply flow rate of the second purge gas is set greater than a supply flow rate of the third purge gas.

8. The method of claim 5 , wherein

(b-2) includes non-simultaneously performing a first set a first preset number of times, the first set comprising:

exhausting an interior of the process chamber substantially without supplying a gas into the process chamber; and

supplying a second purge gas into the process chamber,

(c-2) includes non-simultaneously performing a second set a second preset number of times, the second set comprising:

exhausting the interior of the process chamber substantially without supplying a gas into the process chamber; and

supplying the third purge gas into the process chamber, and

the first preset number is set greater than the second preset number.

9. The method of claim 1 , wherein in the act of forming the film, (c-1), (c-2), (b-1), and (b-2) are successively performed in the named order, and

the exhausted gas amount in (c-2) is set greater than the exhausted gas amount in (b-2), the exhaust rate in (c-2) is set greater than the exhaust rate in (b-2), or the exhausted gas amount and the exhaust rate in (c-2) are respectively set greater than the exhausted gas amount and the exhaust rate in (b-2).

10. The method of claim 9 , wherein a gas exhaust time in (c-2) is set longer than a gas exhaust time in (b-2).

11. The method of claim 9 , wherein

(b-2) includes supplying the second purge gas into the process chamber,

(c-2) includes supplying the third purge gas into the process chamber, and

a supply flow rate of the third purge gas is set greater than a supply flow rate of the second purge gas.

12. The method of claim 9 , wherein

(c-2) includes non-simultaneously performing a first set a first preset number of times, the first set comprising:

exhausting the interior of the process chamber substantially without supplying a gas into the process chamber; and

supplying a third purge gas into the process chamber,

(b-2) includes non-simultaneously performing a second set a second preset number of times, the second set comprising:

exhausting the interior of the process chamber substantially without supplying a gas into the process chamber; and

supplying the second purge gas into the process chamber, and the first preset number is set greater than the second preset number.

13. The method of claim 1 , wherein the hydrogen-containing gas contains nitrogen and hydrogen.

14. The method of claim 1 , wherein the cycle further includes non-simultaneously performing:

(d-1) supplying a carbon-containing gas to the substrate in the process chamber; and

(d-2) exhausting the carbon-containing gas from the process chamber,

the exhausted gas amount in each of (b-2) and (c-2) is set greater than an exhausted gas amount in (d-2), the exhaust rate in each of (b-2) and (c-2) is set greater than an exhaust rate in (d-2), or the exhausted gas amount and the exhaust rate in each of (b-2) and (c-2) are respectively set greater than the exhausted gas amount and the exhaust rate in (d-2).

15. The method of claim 14 , wherein a gas exhaust time in each of (b-2) and (c-2) is set longer than a gas exhaust time in each of (a-2) and (d-2).

16. The method of claim 14 , wherein

(a-2) includes supplying the first purge gas into the process chamber,

(b-2) includes supplying the second purge gas into the process chamber,

(c-2) includes supplying the third purge gas into the process chamber,

(d-2) includes supplying a fourth purge gas into the process chamber, and

each of a supply flow rate of the second purge gas and a supply flow rate of the third purge gas is set greater than each of a supply flow rate of the first purge gas and a supply flow rate of the fourth purge gas.

17. The method of claim 14 , wherein each of (b-2) and (c-2) includes non-simultaneously performing a set a preset number of times, the set comprising:

exhausting an interior of the process chamber substantially without supplying a gas into the process chamber; and

supplying the second or third purge gas into the process chamber, and

(a-2) includes supplying the first purge gas into the process chamber, and (d-2) includes supplying a fourth purge gas into the process chamber.

18. The method of claim 4 , wherein in each of (b-2) and (c-2), a supply time of the second or third purge gas in the act of supplying the second or third purge gas is set shorter than an exhaust time in the act of exhausting the interior of the process chamber.