Granted Patent
B2
US 12,215,031 · App. 14/864,162 · Granted Feb 4, 2025
High purity polysilocarb derived silicon carbide powder
Inventors:
Andrew R. Hopkins (Sylvania, OH); Ashish P. Diwanji (New Albany, OH); Walter J. Sherwood (Glenville, NY); Douglas M. Dukes (Troy, NY); Glenn Sandgren (Ambler, PA); Mark S. Land (Houston, TX); Brian L. Benac (Hadley, NY)
Assignee:
Pallidus, Inc.
C01B32/956C01B32/977C04B35/56C04B35/5603C04B35/571C04B35/80C08G77/20C08G77/50C08L83/04C23C16/325C23C16/401C01P2002/30C01P2006/32C04B2235/3418C04B2235/3826C04B2235/44C04B2235/48C04B2235/483C04B2235/528C04B2235/5427C04B2235/5436C04B2235/6581C04B2235/72C04B2235/727C04B2235/76C04B2235/766C04B2235/767C04B2235/77C04B2235/96C04B2235/9607C04B2235/9684C08G77/12C08G77/80C09K8/80H01L21/02378H01L21/02529H01L21/0262
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Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Claims (12)
1. A high purity polysilocarb derived ceramic SiC powder the powder comprising:
a. silicon carbide;
b. the powder having an average diameter of less than 1 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure; and,
c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.
2. A high purity polysilocarb derived ceramic SIC powder the powder comprising:
a. silicon carbide;
b. the powder having an average diameter of less than 0.6 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure; and,
c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.
3. A high purity polysilocarb derived ceramic SiC powder, the powder comprising:
a silicon carbide;
b. the powder having an average diameter of less than 100 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure; and,
c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.
Assignments (3)
SECURITY INTEREST
Recorded Jan 10, 2025
From: PALLIDUS, INC.
To: R&R PALLIDUS HOLDINGS II LLC, AS ADMINISTRATIVE AGENT
Reel/Frame 069818/0486 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded May 1, 2018
From: MELIOR INNOVATIONS, INC.
To: PALLIDUS, INC.
Reel/Frame 045685/0773 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Mar 4, 2016
From: HOPKINS, ANDREW R.; MOELLER, TIMOTHY C.; SHERWOOD, WALTER J.; LAND, MARK S.; ELY, JOHN; DYK, THOMAS
To: MELIOR INNOVATIONS, INC.
Reel/Frame 037893/0722 →
Continuity (11)
Provisional Application
62055397
· Sep 25, 2014
Provisional Application
62055461
· Sep 25, 2014
Provisional Application
62055497
· Sep 25, 2014
Provisional Application
62112025
· Feb 4, 2015
Provisional Application
61818906
· May 2, 2013
Provisional Application
61818981
· May 3, 2013
Provisional Application
61946598
· Feb 28, 2014
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