IP Library Granted Patent US 9,890,043
Granted Patent B2
US 9,890,043 · App. 14/869,547 · Granted Feb 13, 2018

Sorting two-dimensional nanomaterials by thickness

Inventors: Mark C. Hersam (Wilmette, IL); Alexander A. Green (Boston, MA); Jian Zhu (Evanston, IL)
Assignee: Northwestern University
C01B21/064B01D21/26B03D3/00B82Y30/00B82Y40/00C01B21/0648C01B31/04C01B31/0469C01B31/0484C01B31/0492C01G29/006C01G39/06C01G41/00C04B35/522C04B35/583C01B2204/02C01B2204/04C01B2204/06C01B2204/28C01P2004/20C01P2004/24C04B2235/386C04B2235/425C04B2235/5292C04B2235/5454Y10S977/845Y10T436/255Y10T436/25375
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Quick Facts
Patent No.
US 9,890,043
App. No.
14/869,547
Granted
Feb 13, 2018
Kind
B2
Abstract

The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating boron nitride nanomaterials having a controlled number of atomic layer(s).

Claims (24)

1. A method for separating planar nanomaterials by thickness, the method comprising:

centrifuging a boron nitride nanomaterial composition in contact with an aqueous fluid medium comprising a density gradient, wherein the boron nitride nanomaterial composition comprises one or more surface active components and a polydisperse population of planar boron nitride nanomaterials comprising monolayer, bilayer and tri-layer boron nitride nanomaterials, which is polydisperse at least with respect to thickness and has a mean thickness on the order of nanometers; and

separating the boron nitride nanomaterial composition into two or more separation fractions each comprising a subpopulation of planar boron nitride nanomaterials from the polydisperse population, wherein the subpopulation of planar boron nitride nanomaterials in at least one of the two or more separation fractions has a mean thickness that is less than the mean thickness of the polydisperse population.

2. The method of claim 1 , wherein the planar nanomaterials comprise planar hexagonal boron nitride nanomaterials.

3. The method of claim 1 , wherein the one or more surface active components comprise a planar organic group.

4. The method of claim 3 , wherein the one or more surface active components is a copolymer of oxyethylene and oxypropylene.

5. A method for separating hexagonal boron nitride nanomaterials by thickness, the method comprising:

sonicating hexagonal boron nitride in a first fluid medium to provide a hexagonal boron nitride nanomaterial composition;

centrifuging the hexagonal boron nitride nanomaterial composition in contact with an aqueous second fluid medium comprising a density gradient, wherein the hexagonal boron nitride nanomaterial composition comprises one or more surface active components and a polydisperse population of planar hexagonal boron nitride nanomaterials comprising monolayer, bilayer, trilayer and n-layer hexagonal boron nitride nanomaterials, where n is an integer in the range of 4 to 10; and

separating the hexagonal boron nitride nanomaterial composition into two or more separation fractions each comprising a subpopulation of planar hexagonal boron nitride nanomaterials from the polydisperse population, wherein the subpopulation in at least one of the two or more separation fractions comprises greater than 50% of the monolayer hexagonal boron nitride nanomaterials, bilayer hexagonal boron nitride nanomaterials, trilayer hexagonal boron nitride nanomaterials, or combinations thereof.

6. The method of claim 5 , wherein the subpopulation in at least one of the two or more separation fractions comprises greater than 30% of the monolayer or bilayer hexagonal boron nitride nanomaterials, or a combination thereof.

7. The method of claim 5 , wherein the one or more surface active components comprise an amphiphilic compound having a planar core.

8. The method of claim 7 , wherein the one or more surface active components is a copolymer of oxyethylene and oxypropylene.

9. The method of claim 5 , wherein the subpopulation in one of the separation fractions comprises greater than 80% of the monolayer hexagonal boron nitride.

10. The method of claim 5 , wherein a subpopulation of at least one of the two or more separation fractions is deposited on a substrate.

11. The method of claim 10 , wherein the subpopulation in one of the separation fractions comprises greater than 80% of the monolayer hexagonal boron nitride and is deposited on the substrate.

12. The method of claim 11 , wherein the substrate and hexagonal boron nitride deposited thereon are incorporated into an electronic heterostructure device.

13. A method for separating monolayer hexagonal boron nitride nanomaterials, the method comprising:

centrifuging a hexagonal boron nitride nanomaterial composition in contact with an aqueous fluid medium comprising a density gradient, wherein the hexagonal boron nitride nanomaterial composition comprises one or more copolymers of oxyethylene and oxypropylene and a polydisperse population of planar hexagonal boron nitride nanomaterials comprising monolayer, bilayer and trilayer hexagonal boron nitride nanomaterials; and

separating the hexagonal boron nitride nanomaterial composition into two or more separation fractions each comprising a subpopulation of planar hexagonal boron nitride nanomaterials from the polydisperse population, wherein the subpopulation in one of the two or more separation fractions comprises greater than 50% of the monolayer hexagonal boron nitride nanomaterials.

14. The method of claim 13 , wherein the subpopulation in the one of the two or more separation fractions comprises greater than 80% of the monolayer hexagonal boron nitride nanomaterial.

15. The method of claim 13 , wherein a subpopulation of at least one of the two or more separation fractions is deposited on a substrate.

16. The method of claim 15 , wherein the subpopulation in one of the separation fractions comprises greater than 80% of the monolayer hexagonal boron nitride and is deposited on the substrate.

17. The method of claim 16 , wherein the substrate and hexagonal boron nitride deposited thereon are incorporated into an electronic heterostructure device.

Assignments (2)
CONFIRMATORY LICENSE Recorded Mar 19, 2025
From: NORTHWESTERN UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 070556/0844 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2016
From: HERSAM, MARK C.; GREEN, ALEXANDER A.; ZHU, JIAN
To: NORTHWESTERN UNIVERSITY
Reel/Frame 037417/0171 →
Continuity (5)
Continuation In Part 14528729 · Oct 30, 2014
Continuation In Part 14507240 · Oct 6, 2014
Division 12856348 · Aug 13, 2010
Provisional Application 61234132 · Aug 14, 2009
Related Publication 20160016796A1 · Jan 21, 2016