High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods
View Patent ↗Solid-state transducer (“SST”) dies and SST arrays having electrical cross-connections are disclosed herein. An array of SST dies in accordance with a particular embodiment can include a first terminal, a second terminal and a plurality of SST dies coupled between the first and second terminals with at least a pair of the SST dies being coupled in parallel. The plurality of SST dies can individually include a plurality of junctions coupled in series with an interconnection between each individual junction. Additionally, the individual SST dies can have a cross-connection contact coupled to the interconnection. In one embodiment, the array can further include a cross-connection between the cross-connection contacts on the pair of the SST dies.
1. A method of forming an array of light-emitting diodes (LEDs), comprising:
providing a first terminal and a second terminal;
coupling a plurality of LED dies between the first and second terminals with at least a pair of the LED dies being coupled in parallel, wherein:
each of the plurality of LED dies includes a plurality of junctions coupled in series with an interconnection between an adjacent pair of the plurality of junctions and a cross-connection contact coupled to the interconnection; and
forming a cross-connection between the cross-connection contacts on at least the pair of the LED dies.
2. The method of claim 1 , further comprising electrically coupling the first terminal and the second terminal to an AC power source.
3. The method of claim 1 , further comprising coupling a bond pad to the cross-connection contact on each of the pair of LED dies, wherein forming the cross-connection between the cross-connection contacts on at least the pair of the LED dies includes wire bonding between the bond pads on at least the pair of the LED dies.
4. The method of claim 1 wherein the cross-connection contact of each of the plurality of LED dies is coupled to the interconnection via a conductive line.
5. The method of claim 1 wherein the plurality of junctions coupled in series are separated by a trench.
6. The method of claim 5 wherein the interconnection extends across the trench.
7. A method of forming a solid-state transducer (SST) die having a plurality of junctions coupled in series, the method comprising:
forming, on a semiconductor wafer, a light-emitting diode (LED) structure having a first semiconductor material at a first side, a second semiconductor material at a second side opposite the first side, and a light-emitting active region between the first semiconductor material and the second semiconductor material;
forming, on the semiconductor wafer, a first contact on a first junction, the first contact electrically coupled to the first semiconductor material;
forming, on the semiconductor wafer, a second contact on a second junction, the second contact electrically coupled to the second semiconductor material;
forming, on the semiconductor wafer, a trench between the first junction and the second junction;
forming, on the semiconductor wafer, an interconnect between the first junction and the second junction, the interconnect extending across the trench and electrically coupling the first junction and the second junction;
forming, on the semiconductor wafer, a conductive line electrically connected to the interconnect; and
forming, on the semiconductor wafer, a cross-connection contact electrically coupled to the conductive line,
wherein the cross-connection contact is separated from the first and second semiconductor materials by an insulating material such that the cross-connection contact is not in direct electrical contact with either of the first and second semiconductor materials.
8. The method of claim 7 wherein the first, second and cross-connection contacts are accessible from the first side of the LED structure.
9. The method of claim 7 wherein forming the conductive line comprises forming the conductive line extending along the trench transversely with respect to the interconnect.
10. The method of claim 7 wherein forming the interconnect comprises forming the interconnect between the first contact and the second contact.
11. The method of claim 7 wherein the first contact is electrically isolated from the second semiconductor material of the first junction and the second contact is electrically isolated from the first semiconductor material of the second junction.
12. An array comprising:
first and second solid-state transducer (SST) dies, each die comprising:
first and second light-emitting diode (LED) junctions each having a first semiconductor material and a second semiconductor material;
a trench separating the first LED junction from the second LED junction;
an interconnect extending across the trench and between the first semiconductor material of the first LED junction and the second semiconductor material of the second LED junction, the interconnect electrically coupling the first LED junction to the second LED junction in series; and
a conductive line electrically connected to the interconnect and extending along the trench transversely with respect to the interconnect; and
a cross-connection extending between the conductive line of the first SST die and the conductive line of the second SST die, the cross-connection electrically coupling the first SST die to the second SST die in parallel.
13. The array of claim 12 wherein the first and second LED junctions are lateral LED junctions.
14. The array of claim 12 , further comprising a first terminal and a second terminal, wherein a plurality of SST dies are coupled between the first terminal and the second terminal in series, and wherein the first SST die and the second SST die are coupled between the first terminal and the second terminal in parallel.
15. The array of claim 12 , further comprising a first contact electrically coupled to the first semiconductor material of the first LED junction and a second contact electrically coupled to the second semiconductor material of the second LED junction, wherein the interconnect extends between the first contact and the second contact.
16. The array of claim 15 wherein the first contact is electrically isolated from the second semiconductor material of the first LED junction, and wherein the second contact is electrically isolated from the first semiconductor material of the second LED junction.
17. The array of claim 12 , further comprising a cross-connection contact coupled to the conductive line.
18. The array of claim 17 wherein the cross-connection extends between the cross-connection contact of the first SST die and the cross-connection contact of the second SST die.
19. The array of claim 17 wherein the cross-connection contact is separated from the first semiconductor material and the second semiconductor material by an insulating material such that the cross-connection contact is not in direct electrical contact with either of the first and second semiconductor materials.