High DQE imaging device

1. An imaging device, comprising:

a scintillator layer configured to receive radiation;

an array of photodiode elements, wherein the scintillator layer is configured to receive the radiation after the radiation has passed through the array of photodiode elements; and

an additional scintillator layer, wherein the array of photodiode elements is located between the scintillator layer and the additional scintillator layer;

wherein the layer of photodiode elements is configured to generate signals in response to photons from both the scintillator layer and the additional scintillator layer, and wherein the photons from both the scintillator layer and the additional scintillator layer are based on a same imaging beam comprising the radiation; and

wherein the imaging device further comprises a substrate supporting the array of photodiode elements, wherein parts, not entireties, of respective ones of the photodiode elements are located beneath a surface of the substrate.

2. The imaging device of claim 1 , wherein the substrate comprises a glass substrate, wherein the array of photodiode elements is secured to the glass substrate, wherein the glass substrate has a first side and an opposite second side, the first side being closer to a radiation source than the second side.

3. The imaging device of claim 2 , wherein the array of photodiode elements is located closer to the first side of the glass substrate than the second side.

4. The imaging device of claim 2 , wherein the array of photodiode elements is located closer to the second side of the glass substrate than the first side.

5. The imaging device of claim 1 , further comprising a layer of focusing elements located between the array of photodiode elements and the scintillator layer.

6. The imaging device of claim 5 , wherein the layer of focusing elements comprises a fiber optic array.

7. The imaging device of claim 6 , wherein one or more sides of the scintillator layer are beveled.

8. The imaging device of claim 5 , wherein the layer of focusing elements comprises a brightness enhancement film (BEF).

9. The imaging device of claim 1 , wherein the scintillator layer comprises an array of scintillator elements, and at least two of the scintillator elements are separated by an air gap.

10. The imaging device of claim 9 , wherein the air gap extends from a first side of the scintillator layer to a second side of the scintillator layer.

11. The imaging device of claim 9 , wherein the at least two of the scintillator elements are separated by an additional air gap, wherein the air gap extends from a first side of the scintillator layer, and the additional air gap extends from a second side of the scintillator layer.

12. The imaging device of claim 1 , wherein the scintillator layer comprises an array of scintillator elements, and at least two of the scintillator elements are separated by a wall that is configured to reflect photons.

13. The imaging device of claim 12 , wherein the wall has a photon-reflectivity that varies through a thickness of the scintillator layer.

14. The imaging device of claim 1 , wherein the scintillator layer has a first plane and the additional scintillator layer has a second plane, and the scintillator layer and the additional scintillator layer are arranged next to each other so that the first plane and the second plane form a non-zero angle relative to each other.

15. The imaging device of claim 14 , wherein the photodiode elements are arranged in a flat plane, and wherein the imaging device further comprises fiber optics coupling the respective scintillator elements in the scintillator layer and in the additional scintillator layer to the respective photodiode elements.

16. The imaging device of claim 1 , wherein the scintillator layer is non-pixelated.

17. The imaging device of claim 16 , further comprising an optical grid coupled to the scintillator layer.

18. The imaging device of claim 17 , wherein the optical grid comprises a one-dimensional grid.

19. The imaging device of claim 17 , wherein the optical grid comprises a two-dimensional grid.

20. The imaging device of claim 17 , wherein the optical grid comprises reflecting walls or a device with a variation in index of refraction for internal reflection.

21. The imaging device of claim 17 , wherein the optical grid comprises metalized mylar.

22. The imaging device of claim 1 , further comprising a plate coupled to the scintillator layer.

23. An imaging device, comprising:

a scintillator layer;

an array of photodiode elements; wherein the scintillator layer is configured to receive radiation after it has passed through the array of photodiode elements; and

an additional scintillator layer, wherein the array of photodiode elements is located between the scintillator layer and the additional scintillator layer;

wherein the array of photodiode elements comprises only a single layer of photodiode elements located between the scintillator layer and the additional scintillator layer, and the single layer of photodiode elements is configured to generate signals in response to photons from both the scintillator layer and the additional scintillator layer, and wherein the scintillator layer and the additional scintillator layer are configured to operate simultaneously with a same radiation source providing the radiation; and

wherein the imaging device further comprises a substrate supporting the array of photodiode elements, wherein parts, not entireties, of respective ones of the photodiode elements are located beneath a surface of the substrate.

24. An imaging device, comprising:

a non-pixelated scintillator layer configured to receive radiation and generate photons in response to the radiation;

an array of photodiode elements configured to generate electrical signals in response to the photons; and

an optical grid located between the non-pixelated scintillator layer and the array of photodiode elements;

wherein the imaging device further comprises an additional non-pixelated scintillator layer, and an additional optical grid, wherein the additional non-pixelated scintillator layer and the additional optical grid are located between the optical grid and the array of photodiode elements; and

wherein the imaging device further comprises a substrate supporting the array of photodiode elements, wherein parts, not entireties, of respective ones of the photodiode elements are located beneath a surface of the substrate.

25. The imaging device of claim 24 , wherein the optical grid comprises a one-dimensional grid.

26. The imaging device of claim 24 , wherein the optical grid comprises a two-dimensional grid.

27. The imaging device of claim 24 , wherein the optical grid comprises reflecting walls or a device with a variation in index of refraction for internal reflection.

28. The imaging device of claim 24 , wherein the optical grid comprises metalized mylar.

29. The imaging device of claim 24 , wherein the scintillator layer is configured to receive radiation that has passed through the array of photodiode elements.

30. The imaging device of claim 24 , wherein the scintillator layer is configured to receive radiation before the array of photodiode elements.

31. The imaging device of claim 24 , wherein the optical grid and the additional optical grid have different respective grid pitches.

32. The imaging device of claim 24 , wherein the scintillator layer has a first index of refraction, and the optical grid has a second index of refraction that is less than the first index of refraction.