Systems and methods for treating substrates with cryogenic fluid mixtures
View Patent ↗Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. The fluid mixture may be expanded through a nozzle to form an aerosol spray or gas cluster jet (GCJ) spray may impinge the microelectronic substrate and remove particles from the microelectronic substrate's surface. In one embodiment, the fluid mixture may be maintained to prevent liquid formation within the fluid mixture prior to passing the fluid mixture through the nozzle. The fluid mixture may include nitrogen, argon, helium, neon, xenon, krypton, carbon dioxide, or any combination thereof.
1. A method for treating a microelectronic substrate, comprising
providing the microelectronic substrate in a vacuum process chamber comprising a gas expansion component comprising an inlet and an outlet, wherein the process chamber is at a pressure of 35 Torr or less and wherein the microelectronic substrate is positioned
opposite the gas expansion component to provide a gap between the substrate and the outlet in the range from 2 mm to 50 mm;
supplying, to the gas expansion component, a pressurized and cooled gas comprising nitrogen and/or argon, wherein the gas as supplied to the gas expansion component is at a temperature in the range from 70 K to 200 K and wherein the gas as supplied to the gas expansion component is at a pressure that prevents liquid forming in the gas:
expanding the pressurized and cooled gas into the process chamber through the gas expansion component such that at least a portion of the expanded gas laterally flows across and contacts the microelectronic substrate; and
removing objects from the microelectronic substrate using the expanded gas.
2. The method of claim 1 , wherein the incoming temperature comprises a value between 120K and 200K.
3. The method of claim 1 , wherein the gap distance comprises in the range from 2 mm to 20 mm.
4. The method of claim 1 , wherein the chamber pressure comprises a magnitude of 5 Torr to 10 Torr.
5. The method of claim 1 , wherein the chamber pressure comprises a magnitude of less than 5 Torr.
6. The method of claim 1 , wherein the gas further comprises one or more of the following: xenon, krypton or carbon dioxide.
7. The method of claim 1 , wherein the gas further comprises one or more of the following: helium or neon.
8. The method of claim 1 , wherein the gas comprises nitrogen and argon.
9. The method of claim 1 , wherein the gas comprises nitrogen combined with at least one of the following: helium or neon, and with at least one of the following: argon, krypton, xenon, carbon dioxide.
10. The method of claim 1 , wherein the gas comprises nitrogen and argon that is combined with at least one of the following: helium or neon and at least one of the following: krypton, xenon, or carbon dioxide up to at least a 11:1 ratio.
11. A method for treating a microelectronic substrate, comprising
the microelectronic substrate in a vacuum process chamber comprising a gas expansion component, wherein the process chamber is at a pressure of 35 Torr or less and wherein the microelectronic substrate is positioned;
supplying, to the gas expansion component, a pressurized and cooled gas comprising nitrogen and/or argon, wherein the gas is at a temperature in the range from 70 K to 200 K and wherein the gas is at a pressure that prevents liquid forming in the gas:
positioning the substrate at a gap distance between the outlet and the substrate, the gap distance being in the range from 2 mm to 50 mm and being based, at least in part, on a ratio of a constant parameter divided by the chamber pressure;
expanding the pressurized and cooled gas into the process chamber through the gas expansion component such that at least a portion of the expanded gas laterally flows across and contacts the microelectronic substrate; and
removing objects from the microelectronic substrate using the expanded gas that contacts the microelectronic substrate.
12. The method of claim 11 , wherein the constant parameter comprises a value between 40 and 60.
13. The method of claim 12 , wherein the constant parameter comprises units of distance x pressure units.
14. The method of claim 13 , wherein the units of distance comprise millimeters and the units of pressure comprising Torr.
15. The method of claim 11 , wherein the gas mixture comprises nitrogen and argon.
16. The method of claim 11 , wherein the gas mixture comprises a mixture of nitrogen or argon and one or more of the following: xenon, helium, neon, krypton or carbon dioxide.
17. The method of claim 11 , wherein the gas mixture comprises nitrogen or argon and one or more of the following: xenon, krypton or carbon dioxide.
18. The method of claim 11 , wherein the gas mixture comprises nitrogen or argon and one or more of the following: helium or neon.