Fan-out wafer-level packaging using metal foil lamination
Fan-out wafer-level packaging (WLP) using metal foil lamination is provided. An example wafer-level package incorporates a metal foil, such as copper (Cu), to relocate bonding pads in lieu of a conventional deposited or plated RDL. A polymer such as an epoxy layer adheres the metal foil to the package creating conductive contacts between the metal foil and metal pillars of a die. The metal foil may be patterned at different stages of a fabrication process. An example wafer-level package with metal foil provides relatively inexpensive electroplating-free traces that replace expensive RDL processes. Example techniques can reduce interfacial stress at fan-out areas to enhance package reliability, and enable smaller chips to be used. The metal foil provides improved fidelity of high frequency signals. The metal foil can be bonded to metallic pillar bumps before molding, resulting in less impact on the mold material.
1. A wafer-level package, comprising:
an integrated circuit die including metallic pillars;
at least a layer of a B-stage material occupying at least part of a volume between the metallic pillars of the integrated circuit die;
predetermined holes in the B-stage material approximating a placement of the metallic pillars;
a patterned metal foil adhered by the B-stage material to the integrated circuit die or to a mold material of the wafer-level package, the metal foil in conductive contact with the metallic pillars;
wherein the metal foil is patterned to create metal traces for relocating conductive contacts fanned in or fanned-out from the metallic pillars; and
wherein the B-stage material comprises a compliant epoxy to reduce an interface stress between the metallic pillars and the integrated circuit die at a fan-out boundary or a fan-in boundary of the wafer-level package.
2. The wafer-level package of claim 1 , wherein the metal foil comprises a metal laminate sheet.
3. A wafer-level package, comprising:
an integrated circuit die including metallic pillars;
at least a layer of a B-stage material occupying at least part of a volume between the metallic pillars of the integrated circuit die;
holes in the B-stage material approximating a placement of the metallic pillars;
a patterned metal foil adhered by the B-stage material to the integrated circuit die or to a mold material of the wafer-level package, the metal foil in conductive contact with the metallic pillars;
wherein the metal foil is patterned to create metal traces for relocating conductive contacts fanned in or fanned-out from the metallic pillars;
a compliant polymer layer over the patterned metal foil;
a compliant polymer of the compliant polymer layer also comprising a mechanical stress buffer between sidewalls of one or more of the metallic pillars and sidewalls of a hole in the B-stage material surrounding the one or more metallic pillars;
the compliant polymer filling gaps between the one or more of the metallic pillars and the sidewalls of the hole, the compliant polymer filing gaps in the range of 0.1-50.0 μm; and
wherein each hole comprises a circular, oval, square, or rectangular cross-section.
4. The wafer-level package of claim 3 , wherein the compliant polymer comprises a polymer selected from the group consisting of a polyimide, a polymer with a Young's Modulus or tensile modulus less than 4.0 GPa (gigapascals), and a dielectric with a Young's Modulus or tensile modulus less than 4.0 GPa.
5. A wafer-level fabrication process, comprising:
selecting a die including metal pillars of an integrated circuit;
incorporating the selected die in a wafer-level package;
adhering a metal foil to the wafer-level package via a polymer to create conductive contacts between the metal foil and the metal pillars;
after adhering the metal foil via the polymer, encasing at least part of the die in a molding material;
patterning the metal foil to create metal traces for fanning out conductive contacts corresponding to the metal pillars; and
filling voids of predetermined size around at least part of the metal pillars with a cushion material to reduce a mechanical stress between the metal pillars and the die, wherein a stress-relief zone provided by the cushion material extends radially outward in a ring or cylinder from an outer surface of each metal pillar for a distance in the range of 0.1-50.0 μm.
6. The wafer-level fabrication process of claim 5 , wherein the metal foil comprises copper (Cu) of a consistent thickness capable of enhancing fidelity of high frequency signals during operation.