Semiconductor device and method for fabricating the same

1. A method for fabricating semiconductor device, comprising:

providing a substrate having a fin-shaped structure thereon and shallow trench isolation (STI) around the fin-shaped structure;

forming a gate line across the fin-shaped structure and on the STI;

performing a first cutting process to remove the part of the gate line directly above the fin-shaped structure and the fin-shaped structure directly under the gate line; and

performing a second cutting process to remove part of the gate line on the STI.

2. The method of claim 1 , wherein the gate line comprises:

a high-k dielectric layer;

a work function metal layer on the high-k dielectric layer; and

a low resistance metal layer on the work function layer.

3. The method of claim 1 , further comprising performing the first cutting process and the second cutting process simultaneously.

4. The method of claim 1 , further comprising:

forming a first gate trench on the fin-shaped structure after performing the first cutting process and forming a second gate trench on the STI after forming the second cutting process; and

filling an insulating material into the first gate trench and the second trench for forming a first gate isolation and a second gate isolation.