Semiconductor device
A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
1. A method for manufacturing an oxide semiconductor film and an oxide film, comprising:
forming an oxide semiconductor film;
forming an oxide film over the oxide semiconductor film; and
etching the oxide semiconductor film and the oxide film by an etchant comprising a phosphoric acid,
wherein each of the oxide film and the oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film.
2. The method for manufacturing an oxide semiconductor film and an oxide film, according to claim 1 , wherein the etchant comprising the phosphoric acid is a phosphoric acid solution.
3. The method for manufacturing an oxide semiconductor film and an oxide film, according to claim 1 ,
wherein the In-M-Zn oxide comprised in the oxide film is an In—Ga—Zn oxide, and
wherein the In-M-Zn oxide comprised in and the oxide semiconductor film is an In—Ga—Zn oxide.
4. The method for manufacturing an oxide semiconductor film and an oxide film, according to claim 1 ,
wherein the oxide semiconductor film comprises a crystal part, and
wherein a c-axis of the crystal part is parallel to a normal vector of a surface of the oxide semiconductor film.
5. A method for manufacturing an oxide semiconductor film and an oxide film, comprising:
forming a first oxide semiconductor film;
forming a first oxide film over the first oxide semiconductor film; and
etching the first oxide semiconductor film and the first oxide film by an etchant comprising a phosphoric acid so as to form a second oxide semiconductor film and a second oxide film over the second oxide semiconductor film,
wherein each of the first oxide film and the first oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the first oxide film has a lower atomic ratio of In to M than the first oxide semiconductor film,
wherein the second oxide semiconductor film has a first angle formed between a bottom surface of the second oxide semiconductor film and a side surface of the second oxide semiconductor film, and
wherein the second oxide film has a second angle formed between a bottom surface of the second oxide film and a side surface of the second oxide film, the second angle being greater than the first angle and being greater than or equal to 10° and less than 90°.
6. The method for manufacturing an oxide semiconductor film and an oxide film, according to claim 5 , wherein the etchant comprising the phosphoric acid is a phosphoric acid solution.
7. The method for manufacturing an oxide semiconductor film and an oxide film, according to claim 5 ,
wherein the In-M-Zn oxide comprised in the second oxide film is an In—Ga—Zn oxide, and
wherein the In-M-Zn oxide comprised in and the second oxide semiconductor film is an In—Ga—Zn oxide.
8. The method for manufacturing an oxide semiconductor film and an oxide film, according to claim 5 , wherein the first angle of the second oxide semiconductor film is greater than or equal to 10° and less than 90°.
9. The method for manufacturing an oxide semiconductor film and an oxide film, according to claim 5 ,
wherein the second oxide semiconductor film comprises a crystal part, and
wherein a c-axis of the crystal part is parallel to a normal vector of a surface of the oxide semiconductor film.
10. A method for manufacturing a semiconductor device, comprising:
forming a transistor comprising the second oxide semiconductor film and the second oxide film manufactured by the method according to claim 5 ,
wherein the second oxide semiconductor film comprises a channel formation region.
11. A method for manufacturing a semiconductor device, comprising:
forming a transistor, the transistor comprising:
an oxide semiconductor film comprising a channel formation region;
an oxide film over the oxide semiconductor film; and
a conductive film over the oxide semiconductor film and the oxide film, the conductive film being in contact with a side surface of the oxide semiconductor film and a side surface of the oxide film,
forming an insulating film over the oxide semiconductor film, the oxide film, and the conductive film, and
forming an electrode over the insulating film, the electrode being electrically connected to the oxide semiconductor film through the conductive film,
wherein each of the oxide film and the oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film,
wherein the oxide semiconductor film has a first angle formed between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film, and
wherein the oxide film has a second angle formed between a bottom surface of the oxide film and a side surface of the oxide film, the second angle being greater than the first angle and being greater than or equal to 10° and less than 90°.
12. The method for manufacturing a semiconductor device, according to claim 11 , wherein the transistor comprises a gate electrode under the oxide semiconductor film.
13. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the In-M-Zn oxide comprised in the oxide film is an In—Ga—Zn oxide, and
wherein the In-M-Zn oxide comprised in and the oxide semiconductor film is an In—Ga—Zn oxide.
14. The method for manufacturing a semiconductor device, according to claim 11 , wherein the first angle of the oxide semiconductor film is greater than or equal to 10° and less than 90°.
15. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the oxide semiconductor film comprises a crystal part, and
wherein a c-axis of the crystal part is parallel to a normal vector of a surface of the oxide semiconductor film.
16. The method for manufacturing a semiconductor device, according to claim 11 , further comprising:
forming a liquid crystal layer over the electrode.
17. The method for manufacturing a semiconductor device, according to claim 11 , further comprising:
forming a light-emitting layer over the electrode.