IP Library Granted Patent US 10,026,475
Granted Patent B2
US 10,026,475 · App. 14/879,008 · Granted Jul 17, 2018

Adaptive configuration of non-volatile memory

Inventors: Shekoufeh Qawami (El Dorado Hills, CA); Rajesh Sundaram (Folsom, CA); David J. Zimmerman (El Dorado Hills, CA); Blaise Fanning (Folsom, CA)
Assignee: Intel Corporation
G11C13/0038G06F1/3275G06F9/30101G06F12/0246G11C13/0004G11C13/0033G11C16/06Y02D10/14
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Quick Facts
Patent No.
US 10,026,475
App. No.
14/879,008
Granted
Jul 17, 2018
Kind
B2
Abstract

Examples are disclosed for adaptive configuration of non-volatile memory. The examples include a mode register configured to include default and updated values to indicate one or more configurations of the non-volatile memory. The examples may also include discoverable capabilities maintained in a configuration table that may indicate memory address lengths and/or operating power states.

Claims (38)

1. An apparatus comprising:

a non-volatile memory chip; and

a mode register to maintain information to indicate default configurations for the non-volatile memory chip including a default external clock operating frequency, a default input/output bus width and a default command address cycle count, the mode register accessible to a controller in order to update the default configurations or update one or more capabilities of the non-volatile memory chip discovered by the controller during initialization or power-up of the non-volatile memory chip, the one or more capabilities discovered by the controller to include available external clock operating frequencies, available input/output pins, available command/address pins and a mode of operation for the non-volatile memory chip to include a storage mode or a memory mode, wherein values included in the mode register following an update to the default configuration indicate a selected external clock operating frequency from among the available external clock operating frequencies, updated input/output bus width based on active input/output pins from among the available input/output pins and updated command address cycle count based on active command/address pins from among the available command/address pins, the indication of the selected external clock operating frequency, the available input/output pins and the available command/address pins based on the mode of operation discovered by the controller.

2. The apparatus of claim 1 , the one or more capabilities further comprising multiple power states to operate the non-volatile memory chip on a computer platform and indicators to cause the non-volatile memory chip to transition between power states of the multiple power states.

3. The apparatus of claim 2 , the multiple power states comprises an active power state, an idle power state, a fast standby power state, a slow standby power state, a power down power state or an off power state.

4. The apparatus of claim 3 , comprising the fast standby power state and the slow standby power state to include the non-volatile memory chip in a refresh state that includes periodically turning on power consuming circuits to refresh internal paths, the fast standby power state to result in periodically turning on high power consuming circuits at a first rate that is more frequent than a second rate for the slow standby power state.

5. The apparatus of claim 3 , comprising the non-volatile memory chip transitioned from the slow standby power state to the active power state in 10 microseconds.

6. The apparatus of claim 3 , the indicators to cause the non-volatile memory chip to transition between power states of the multiple power states comprises a chip select indicator or a clock enable indicator to be used to transition the non-volatile memory chip between at least some of the power states.

7. The apparatus of claim 1 , comprising a higher number of available input/output pins and command/address pins for the memory mode of operation as compared to the number of available input/output pins and command/address pins for the storage mode of operation.

8. The apparatus of claim 1 , comprising the mode of operation provided to the controller from an application operative on a computing platform using the non-volatile memory chip.

9. The apparatus of claim 1 , comprising the non-volatile memory chip including phase change memory (PCM).

10. A method comprising:

storing default values to a mode register for a non-volatile memory chip to indicate default configurations for the non-volatile memory chip including a default external clock operating frequency, a input/output bus width and a default command address cycle count;

receiving updated values based on one or more capabilities of the non-volatile memory chip discovered by a controller during initialization or power-up of the non-volatile memory chip, the one or more capabilities discovered by the controller to include available external clock operating frequencies, available input/output pins, available command/address pins and a mode of operation for the non-volatile memory chip to include a storage mode or a memory mode, the one or more capabilities to include available external clock operating frequencies, available input/output pins, available command/address pins and a mode of operation for the non-volatile memory chip to include a storage mode or a memory mode; and

storing the updated values in the mode register to enable an available external clock operating frequency, the input/output bus width and an updated command address cycle count to be configured based on the updated values, wherein the updated values indicate a selected external clock operating frequency from among the available external clock operating frequencies, updated input/output bus widths based on active input/output pins from among the available input/output pins and the updated command address cycle count based on active command/address pins from among the available command/address pins, the indication of the selected external clock operating frequency, the available input/output pins and the available command/address pins based on the mode of operation discovered by the controller.

11. The method of claim 10 , the one or more capabilities further comprising multiple power states to operate the non-volatile memory chip on a computer platform and indicators to cause the non-volatile memory chip to transition between power states of the multiple power states.

12. The method of claim 11 , the multiple power states comprises an active power state, an idle power state, a fast standby power state, a slow standby power state, a power down power state or an off power state.

13. The method of claim 12 , comprising the fast standby power state and the slow standby power state to include the non-volatile memory chip in a refresh state that includes periodically turning on power consuming circuits to refresh internal paths, the fast standby power state to result in periodically turning on high power consuming circuits at a first rate that is more frequent than a second rate for the slow standby power state.

14. The method of claim 12 , comprising transitioning the non-volatile memory chip from the slow standby power state to the active power state in 10 microseconds.

15. The method of claim 12 , the indicators to cause the non-volatile memory chip to transition between power states of the multiple power states comprises a chip select indicator or a clock enable indicator to be used to transition the non-volatile memory chip between at least some of the power states.

16. The method of claim 10 , comprising the non-volatile memory chip including phase change memory (PCM).

17. A system comprising:

a controller;

a non-volatile memory chip; and

a mode register to maintain information to indicate default configurations for the non-volatile memory chip including a default external clock operating frequency, a input/output bus width and a default command address cycle count, the mode register accessible to the controller in order to update the default configurations or update one or more capabilities of the non-volatile memory chip discovered by the controller during initialization or power-up of the non-volatile memory chip, the one or more capabilities discovered by the controller to include available external clock operating frequencies, available input/output pins, available command/address pins and a mode of operation for the non-volatile memory chip to include a storage mode or a memory mode, wherein values included in the mode register following an update to the default configuration indicate a selected external clock operating frequency from among the available external clock operating frequencies, updated input/output bus width based on active input/output pins from among the available input/output pins and updated command address cycle count based on active command/address pins from among the available command/address pins, the indication of the selected external clock operating frequency, the available input/output pins and the available command/address pins based on the mode of operation discovered by the controller.

18. The system of claim 17 , the one or more capabilities further comprising multiple power states to operate the non-volatile memory chip on a computer platform and indicators to cause the non-volatile memory chip to transition between power states of the multiple power states.

19. The system of claim 18 , the multiple power states comprises an active power state, an idle power state, a fast standby power state, a slow standby power state, a power down power state or an off power state.

20. The system of claim 19 , comprising the fast standby power state and the slow standby power state to include the non-volatile memory chip in a refresh state that includes periodically turning on power consuming circuits to refresh internal paths, the fast standby power state to result in periodically turning on high power consuming circuits at a first rate that is more frequent than a second rate for the slow standby power state.

21. The system of claim 19 , comprising the non-volatile memory chip transitioned from the slow standby power state to the active power state in 10 microseconds.

22. The system of claim 19 , the indicators to cause the non-volatile memory chip to transition between power states of the multiple power states comprises a chip select indicator or a clock enable indicator to be used to transition the non-volatile memory chip between at least some of the power states.

23. The system of claim 17 , comprising a higher number of available input/output pins and command/address pins for the memory mode of operation as compared to the number of available input/output pins and command/address pins for the storage mode of operation.

24. The system of claim 17 , comprising the mode of operation provided to the controller from an application operative on a computing platform using the non-volatile memory chip.

25. The system of claim 17 , comprising the non-volatile memory chip including phase change memory (PCM).

26. The system of claim 17 , comprising one or more of:

one or more processors communicatively coupled to the controller;

a network interface communicatively coupled to the system;

a battery coupled to the system; or

a display communicatively coupled to the system.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2023
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP.
Reel/Frame 062702/0048 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2017
From: QAWAMI, SHEKOUFEH; SUNDARAM, RAJESH; ZIMMERMAN, DAVID J.; FANNING, BLAISE
To: INTEL CORPORATION
Reel/Frame 041872/0888 →
Continuity (2)
Continuation 13977084
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