Semiconductor device and manufacturing method thereof
A semiconductor device and a method of manufacturing the same, the semiconductor device includes a fin shaped structure, a gate structure, an epitaxial layer, a germanium layer, an interlayer dielectric layer and a first plug. The fin shaped structure is disposed on a substrate. The gate structure is formed across the fin shaped structure. The epitaxial layer is disposed in the fin shaped structure adjacent to the gate structure. The germanium layer is disposed on the epitaxial layer. The interlayer dielectric layer covers the substrate and the fin shaped structure. The first plug is disposed in the interlayer dielectric layer to contact the germanium layer.
1. A semiconductor device, comprising:
a fin shaped structure disposed on a substrate;
a gate structure across the fin shaped structure;
a source/drain region disposed in the fin shaped structure adjacent to the gate structure, the source/drain region comprising an epitaxial layer;
a germanium layer disposed on the source/drain region, wherein a portion of the germanium layer is laterally sandwiched between the epitaxial layer and the gate structure;
an interlayer dielectric layer covering the substrate and the fin shaped structure; and
a first plug disposed in the interlayer dielectric layer to contact the germanium layer.
2. The semiconductor device according to claim 1 , wherein the germanium layer completely covers top surfaces of the epitaxial layer.
3. The semiconductor device according to claim 1 , wherein the epitaxial layer comprises SiC, SiP, SiCP, SiGe or Ge.
4. The semiconductor device according to claim 1 , wherein the germanium layer has a thickness substantially being 30 nm to 60 nm.
5. The semiconductor device according to claim 1 , further comprising:
a germanium cap layer disposed under the germanium layer.
6. The semiconductor device according to claim 1 ,
a second plug disposed in the interlayer dielectric layer to contact the gate structure.
7. The semiconductor device according to claim 1 , further comprising:
a spacer surrounding the gate structure, wherein the first plug directly contacts the spacer.
8. The semiconductor device according to claim 1 , further comprising:
a shallow trench isolation disposed in the substrate and surrounding the fin shaped structure.