Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling
A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. The memory device utilizes a local buried channel dielectric in a NAND string that reduces bulk channel leakage at the edge of the NAND string where the electric field gradient along the direction of the string pillar is at or near a maximum during programming operations. The memory device comprises a channel that is coupled at one end to a bitline and at the other end to a source. A select gate is formed at the end of the channel coupled to the bitline to selectively control conduction between the bitline and the channel. At least one non-volatile memory cell is formed along the length of the channel between the select gate and the second end of the channel. A local dielectric region is formed within the channel at the first end of the channel.
1. A memory device, comprising:
multiple layers of memory cells in a vertical stack between a bitline and a source;
a channel with a first region to conduct charge between the channel and the bitline, and a second region to conduct charge between the channel and the source, the channel to create an electric field at the memory cells;
a select gate proximate the first region of the channel to selectively control conduction between the bitline and the channel;
at least one dummy memory cell layer proximate the first region of the channel; and
a dielectric to extend vertically through at least a portion of the channel, including an area proximate the first region of the channel near the select gate and the at least one dummy memory cell.
2. The memory device according to claim 1 , wherein the memory device comprises part of an array of memory devices.
3. The memory device according to claim 1 , wherein the channel includes a polysilicon material.
4. The memory device according to claim 1 , wherein the memory cells comprise non-volatile memory cells.
5. The memory device according to claim 4 , wherein the memory cells comprise a floating-gate (FG) memory cell.
6. The memory device according to claim 4 , wherein the memory cells comprise a charge trap flash (CTF) memory cell.
7. The memory device according to claim 4 , wherein the memory device comprises part of a solid-state drive (SSD).
8. The memory device according to claim 1 , wherein the dielectric comprises an oxide material.
9. The memory device according to claim 1 , wherein the dielectric spans only the portion of the channel.
10. The memory device according to claim 1 , further comprising:
at least one dummy memory cell layer proximate the second region of the channel.
11. The memory device according to claim 1 , wherein the select gate proximate the first region of the channel comprises a first select gate, and further comprising:
a second select gate proximate the second region of the channel, to selectively control conduction between the bitline and the source.
12. A solid state drive having a vertical memory array, comprising:
a nonvolatile memory device including
a vertical string of NAND memory cells, the string to extend between a bitline and a source;
a channel having a first region to conduct charge between the channel and the bitline, and a second region to conduct charge between the channel and the source, the channel to provide an electric field to program the NAND memory cells;
a select gate proximate the first region to selectively control conduction between the bitline and the channel;
at least one dummy memory cell layer proximate the first region of the channel; and
a dielectric to extend vertically through at least a portion of the channel, including an area proximate the first region of the channel near the select gate and the at least one dummy memory cell; and
a controller to control access between the nonvolatile memory device and a host computer.
13. The solid state drive according to claim 12 , wherein the memory device comprises part of an array of memory devices.
14. The solid state drive according to claim 12 , wherein the channel includes a polysilicon material.
15. The solid state drive according to claim 12 , wherein the NAND memory cells comprise a floating-gate (FG) memory cell.
16. The solid state drive according to claim 12 , wherein the NAND memory cells comprise a charge trap flash (CTF) memory cell.
17. The solid state drive according to claim 12 , wherein the dielectric comprises an oxide material.
18. The solid state drive according to claim 12 , wherein the dielectric spans only the portion of the channel.
19. The solid state drive according to claim 12 , the nonvolatile memory device further comprising:
at least one dummy memory cell layer proximate the second region of the channel.
20. The solid state drive according to claim 12 , wherein the select gate proximate the first region of the channel comprises a first select gate, and the nonvolatile memory device further comprising:
a second select gate proximate the second region of the channel, to selectively control conduction between the bitline and the source.