IP Library › Granted Patent US 10,031,101
Granted Patent B2
US 10,031,101 · App. 14/885,240 · Granted Jul 24, 2018

Chemical/physical phenomenon detecting device and method of producing the same

Inventors: Satoshi Saitoh (Osaka, JP); Toshio Yoshida (Osaka, JP); Tomohiro Konishi (Osaka, JP); Kazuaki Sawada (Toyohashi, JP)
Assignees: SHARP KABUSHIKI KAISHA; NATIONAL UNIVERSITY CORP TOYOHASHI UNIVERSITY
G01N27/4145
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,031,101
App. No.
14/885,240
Granted
Jul 24, 2018
Kind
B2
Abstract

An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.

Claims (21)

1. An ion concentration sensor comprising:

a semiconductor substrate;

a sensing section in which electric charges, used to detect an ion concentration, is accumulated;

an electric charge transfer section which transfers the electric charges accumulated in the sensing section;

an electric charge detecting section which detects an amount of the electric charges that have been transferred; and

an ion sensitive film which changes, depending on the ion concentration, the amount of the electric charges to be accumulated in the sensing section,

the sensing section, the electric charge transfer section, and the electric charge detecting section being provided on a diffusion region, on the semiconductor substrate, whose type is opposite to that of the semiconductor substrate,

part of the diffusion region on which part the sensing section is provided being different, in dopant concentration, from the other part of the diffusion region so that the electric charges are injected merely to the sensing section in a state where a voltage is applied to the semiconductor substrate.

2. The ion concentration sensor as set forth in claim 1 , wherein the ion sensitive film changes, depending on the ion concentration, a depth of an electric potential of the sensing section.

3. The ion concentration sensor as set forth in claim 1 , further comprising:

a protective film which covers the ion concentration sensor,

the protective film being provided so that at least part of the ion sensitive film which part is provided on the sensing section is exposed.

4. A method of detecting an ion concentration with use of an ion concentration sensor recited in claim 1 ,

the electric charge transfer section including:

a vertical transfer section which reads out electric charges accumulated in the sensing section and transfers the electric charges in a vertical direction; and

a horizontal transfer section which transfers, to the electric charge detecting section, the electric charges that have been transferred from the vertical transfer section,

the method comprising the steps of:

(a) transferring, to the horizontal transfer section, the electric charges which are accumulated in the vertical transfer section by being read out more than once from the sensing section to the vertical transfer section, the step (a) being carried out by the vertical transfer section;

(b) detecting an initial voltage which corresponds to an amount of the electric charges accumulated in an initial state where no ion is in contact with the ion sensitive film, the step (b) being carried out by the electric charge detecting section;

(c) detecting a detected voltage which corresponds to the amount of the electric charges accumulated in a detection state where an ion is in contact with the ion sensitive film, the step (c) being carried out by the electric charge detecting section; and

(d) calculating a difference between the detected voltage and the initial voltage.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE SECOND ASSIGEE'S NAME PREVIOUSLY RECORDED ON REEL 037072 FRAME 0349. ASSIGNOR(S) HEREBY CONFIRMS THE ENTIRE INTEREST. Recorded Dec 9, 2015
From: SAITOH, SATOSHI; YOSHIDA, TOSHIO; KONISHI, TOMOHIRO; SAWADA, KAZUAKI
To: SHARP KABUSHIKI KAISHA; NATIONAL UNIVERSITY CORPORATION TOYOHASHI UNIVERSITY OF TECHNOLOGY
Reel/Frame 037255/0358 →
CORRECTIVE ASSIGNMENT TO CORRECT THE 2ND ASSIGNEE'S NAME PREVIOUSLY RECORDED AT REEL: 036945 FRAME: 0691. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Nov 9, 2015
From: SAITOH, SATOSHI; YOSHIDA, TOSHIO; KONISHI, TOMOHIRO; SAWADA, KAZUAKI
To: SHARP KABUSHIKI KAISHA; NATIONAL UNIVERSITY CORPORATION, TOYOHASHI UNIVERSITY OF TECHNOLOGY
Reel/Frame 037072/0349 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2015
From: SAITOH, SATOSHI; YOSHIDA, TOSHIO; KONISHI, TOMOHIRO; SAWADA, KAZUAKI
To: SHARP KABUSHIKI KAISHA; TOYOHASHI UNIVERSITY OF TECHNOLOGY
Reel/Frame 036945/0691 →
Priority Claims (1)
JP 2014-214040 · Oct 20, 2014 · national
Continuity (1)
Related Publication 20160109404A1 · Apr 21, 2016
Cited By (1)
US 12,504,340