Method to package multiple MEMS sensors and actuators at different gases and cavity pressures
A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.
1. A semiconductor device having multiple MEMS (micro-electro mechanical system) devices, comprising:
a semiconductor substrate having a first MEMS device and a second MEMS device;
an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity, the encapsulation substrate being bonded to the semiconductor substrate with a bonding material at a lower end of the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity;
wherein the second cavity includes at least one access channel at a recessed region below a first sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate, the access channel being disposed below a bottom portion of the first sidewall without the bonding material; and
a thin film covering the access channel to seal the second cavity;
wherein the first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure, wherein the second atmospheric pressure is different from the first air pressure.
2. The device of claim 1 wherein the first sidewall of the encapsulation substrate is shorter than the other sidewalls to form the recessed region below the first sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate.
3. The device of claim 2 wherein the first air pressure is below atmospheric air pressure.
4. The device of claim 1 wherein the first MEMS device an accelerometer.
5. The device of claim 4 wherein the first air pressure is above atmospheric air pressure.
6. The device of claim 1 the first air pressure is below the second air pressure.
7. The device of claim 1 wherein the first cavity comprises a gas selected from a group consisting of: helium, xenon, krypton, and argon.
8. The device of claim 1 wherein the thin film sealing the at least one access channel comprises a layer of material deposited using a process selected from a group consisting of: CVD, PVD, sputtering, and evaporation.
9. The device of claim 1 where in the thin film overlies the encapsulation substrate.
10. The device of claim 9 wherein the depth of the at least one channel is less than a depth of the first cavity and less than a depth of the second cavity.
11. A semiconductor device having multiple MEMS (micro-electro mechanical system) devices, comprising:
a semiconductor substrate having a MEMS layer that includes a first MEMS device, a second MEMS device, and a MEMS support structure;
an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity, the encapsulation substrate being bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity,
wherein the second cavity includes at least one access channel at a recessed region in the MEMS support structure adjacent to an interface between the encapsulation substrate and the semiconductor substrate;
a thin film covering the access channel to seal the second cavity;
wherein the first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure, wherein the second air pressure is different from the first air pressure.
12. The device of claim 11 further comprising one or more bond pads on the semiconductor substrate.
13. The device of claim 11 wherein the first air pressure is below atmospheric air pressure and wherein the first MEMS device is selected from a group consisting of: a magnetometer, a gyroscope, an oscillator, a filter, and an infrared sensor.
14. The device of claim 11 wherein the first air pressure is above atmospheric air pressure and wherein the first MEMS device is an accelerometer.
15. The device of claim 11 wherein the encapsulation substrate is bonded at the sidewalls to the MEMS support structure in the semiconductor substrate.
16. The device of claim 11 wherein the at least one access channel is located at a recessed region in the MEMS support structure.
17. The device of claim 11 wherein the at least one access channel is located at a recessed region within a device layer in the semiconductor substrate.
18. The device of claim 11 wherein the at least one access channel is located at a recessed region within an interconnect layer in the semiconductor substrate.
19. The device of claim 11 wherein the at least one access channel is located at a recessed region within a dielectric layer in the semiconductor substrate.
20. The device of claim 16 wherein the first air pressure is above atmospheric air pressure, and wherein the first MEMS device is an accelerometer.