Integrated imaging device for infrared radiation and method of production

1. An integrated imaging device, comprising:

a substrate comprising an integrated circuit;

a cover bonded to the substrate;

a dielectric layer between the substrate and the cover;

a sensor or an array of sensors;

a cavity enclosed between the substrate and the cover;

a surface of the substrate opposite the dielectric layer or a surface of the cover opposite the dielectric layer being provided with a structure directing incident radiation to the sensor or array of sensors;

the sensor or the array of sensors being arranged in the cavity;

the cavity being a vacuum or comprising a gas pressure of less than 100 Pa;

at least one metallization layer being embedded in the dielectric layer; and

at least one electrically conductive connection connecting the sensor or array of sensors to the metallization layer, the electrically conductive connection extending from the cavity into the dielectric layer,

wherein the dielectric layer is arranged laterally with respect to the cavity, and

wherein the at least one metallization layer extends from the dielectric layer to the sensor or array of sensors and thus forms the electrically conductive connection.

2. The integrated imaging device of claim 1 , wherein the surface structure is a zone plate for focusing infrared radiation.

3. The integrated imaging device of claim 1 , wherein the surface structure is a single spherical lens or a Fresnel lens for focusing infrared radiation.

4. The integrated imaging device of claim 1 , wherein the sensor or array of sensors comprises a diode having a pn junction formed in polysilicon.

5. The integrated imaging device of claim 1 , wherein the sensor or array of sensors comprises a membrane integrally formed with the electrically conductive connection.

6. The integrated imaging device of claim 5 , wherein the membrane is electrically resistive.

7. The integrated imaging device of claim 5 , wherein the membrane comprises a pn junction.

8. The integrated imaging device of claim 1 , wherein the cavity extends into the substrate and into the cover.

9. The integrated imaging device of claim 1 , further comprising:

at least one through-substrate via in the substrate, the through-substrate via electrically connecting the integrated circuit or the sensor or array of sensors with a connection pad on the surface of the substrate opposite the dielectric layer.

10. The integrated imaging device of claim 9 , wherein the through-substrate via is not filled with electrically conductive or dielectric material, and the cover is bonded to the substrate above the through-substrate via.

11. An integrated imaging device, comprising:

a substrate comprising an integrated circuit;

a cover bonded to the substrate;

a dielectric layer between the substrate and the cover;

a plurality of sensors or an array of sensors;

a cavity enclosed between the substrate and the cover;

a surface of the substrate opposite the dielectric layer or a surface of the cover opposite the dielectric layer being provided with a structure directing incident radiation to the plurality of sensors or the array of sensors;

the plurality of sensors or the array of sensors being arranged in the cavity;

the cavity being a vacuum or comprising a gas pressure of less than 100 Pa; and

the cavity extending into the substrate, the substrate forming compartments of the cavity, the compartments being separated by components of the integrated circuit, each sensor being arranged in or above one of the compartments.

12. The integrated imaging device of claim 11 , wherein the cavity is arranged in the dielectric layer and extends into the cover.

13. The integrated imaging device of claim 11 , wherein the surface structure is a zone plate for focusing infrared radiation.

14. The integrated imaging device of claim 11 , wherein the surface structure is a single spherical lens or a Fresnel lens for focusing infrared radiation.

15. The integrated imaging device of claim 11 , wherein the sensor or array of sensors comprises a diode having a pn junction formed in polysilicon.

16. The integrated imaging device of claim 11 , wherein the sensor or array of sensors comprises a membrane integrally formed with the electrically conductive connection.

17. The integrated imaging device of claim 16 , wherein the membrane is electrically resistive.

18. The integrated imaging device of claim 17 , wherein the membrane comprises a pn junction.

19. A method of producing an integrated imaging device, comprising:

providing a substrate with an integrated circuit, a dielectric layer and at least one metallization layer embedded in the dielectric layer, at least a surface of the dielectric layer being formed by a silicon oxide;

arranging a sensor or an array of sensors on or above the substrate;

forming at least one electrically conductive connection of the sensor or array of sensors to the metallization layer;

applying a cover comprising silicon on the substrate by bonding, thus forming a cavity in which the sensor or array of sensors is arranged, the electrically conductive connection extending from the cavity into the dielectric layer; and

etching a surface of the substrate opposite the dielectric layer or a surface of the cover opposite the dielectric layer to produce a structure directing incident radiation to the sensor or array of sensors.

20. The method of claim 19 , wherein the cavity is formed such that it comprises a vacuum or a gas pressure of less than 100 Pa.

21. The method of claim 19 , wherein the surface structure is etched to form a single spherical lens or a Fresnel lens.

22. The method of claim 21 , wherein the surface in which the lens is to be etched is covered with a patterning layer;

the patterning layer is structured according to the lens; and

the patterning layer is removed by an anisotropic etching process, which transfers the structure of the patterning layer into the surface.

23. The method of claim 22 , wherein the surface in which the lens is to be etched is silicon, and

the patterning layer is formed from a polymer having the same etch rate as silicon.

24. The method of claim 19 , further comprising:

the sensor or array of sensors being arranged in the dielectric layer;

a recess being etched in the substrate under the sensor or array of sensors; and

the dielectric layer being at least partially removed from the sensor or array of sensors.

25. The method of claim 19 , further comprising:

the sensor or array of sensors being arranged on a sacrificial layer and in the dielectric layer;

the sacrificial layer being removed; and

the dielectric layer being at least partially removed from the sensor or array of sensors.

26. The method of claim 19 , further comprising:

the sensor or array of sensors being formed including a membrane of polysilicon, which is integrally structured together with electrically conductive connections connecting the membrane to metallization layers in the dielectric layer.

27. The method of claim 26 , further comprising:

providing the membrane with a pn junction.