IP Library › Granted Patent US 9,553,228
Granted Patent B2
US 9,553,228 · App. 14/891,636 · Granted Jan 24, 2017

Solar cell, production method therefor, and solar cell module

Inventors: Masashi Hino (Settsu, JP); Daisuke Adachi (Settsu, JP)
Assignee: KANEKA CORPORATION
H01L31/074H01L31/022425H01L31/022466H01L31/0747H01L31/1884Y02E10/50
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Quick Facts
Patent No.
US 9,553,228
App. No.
14/891,636
Granted
Jan 24, 2017
Kind
B2
Abstract

A solar cell of the invention includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section. On the first principal surface of the photoelectric conversion section, an insulating layer is provided in a first electroconductive layer-non-formed region where the first electroconductive layer is not formed. The insulating layer includes a first insulating layer is in contact with the first electroconductive layer on the first principal surface of the photoelectric conversion section, and a second insulating layer that is formed so as to cover at least a part of the first insulating layer.

Claims (34)

1. A production method of a solar cell, wherein

the solar cell comprising a photoelectric conversion section and a collecting electrode on a first principal surface of the photoelectric conversion section, and an insulating layer being provided in a first electroconductive layer-non-formed region on the first principal surface of the photoelectric conversion section where the first electroconductive layer is not formed,

the method comprising:

an electroconductive paste coating step of applying onto a first principal surface of a photoelectric conversion section an electroconductive paste containing electroconductive fine particles and an insulating material, and the insulating material exudes from an electroconductive paste coating region, thereby a coating layer consisting of a first electroconductive layer containing electroconductive fine particles and an insulating material and a first insulating layer that is in contact with an outer edge of the first electroconductive layer is formed; and

a plating step of forming a second electroconductive layer on the first electroconductive layer by a plating method, in this order, wherein

a width from a boundary between the first electroconductive layer and the first insulating layer to an end of the first insulating layer on the first principal surface of the photoelectric conversion section is 0.2 to 1.0 mm, and

after the electroconductive paste coating step and before the plating step, a second insulating layer forming step is carried out to form a second insulating layer covering at least a part of the first insulating layer.

2. The production method of the solar cell according to claim 1 , wherein

in the second insulating layer forming step, the second insulating layer is not formed at least a part of the first electroconductive layer, thereby the second insulating layer has an opening section in a first electroconductive layer-formed region, and

in the plating step, the second electroconductive layer is deposited with the opening in the second insulating layer as an origination point.

3. The production method of the solar cell according to claim 1 , wherein

in the second insulating layer forming step, the second insulating layer is also formed on the first electroconductive layer,

before the plating step, a step of forming an opening in the second insulating layer provided on the first electroconductive layer is carried out, and

in the plating step, the second electroconductive layer is deposited with the opening formed in the second insulating layer as an origination point.

4. The production method of the solar cell according to claim 3 , wherein

the first electroconductive layer contains a low-melting-point material,

after the second insulating layer forming step, heating treatment is carried out at an annealing temperature Ta that is higher than a thermal-fluidization onset temperature T 1 of the low-melting-point material, thereby the opening is formed in the second insulating layer.

5. The production method of the solar cell according to claim 1 , wherein a viscosity of the electroconductive paste is 50 to 400 Pa·s.

6. The production method of the solar cell according to claim 1 , wherein

the photoelectric conversion section comprises: a silicon-based thin-film; and a transparent electrode layer, in this order on a first principal surface of a crystalline silicon substrate, and

the collecting electrode is formed on the transparent electrode layer.

7. A production method of a solar cell, wherein

the solar cell comprising a photoelectric conversion section and a collecting electrode on a first principal surface of the photoelectric conversion section, and an insulating layer being provided in a first electroconductive layer-non-formed region on the first principal surface of the photoelectric conversion section where the first electroconductive layer is not formed,

the method comprising:

an electroconductive paste coating step of applying onto a first principal surface of a photoelectric conversion section an electroconductive paste containing electroconductive fine particles and an insulating material, and the insulating material exudes from an electroconductive paste coating region, thereby a coating layer consisting of a first electroconductive layer containing electroconductive fine particles and an insulating material and a first insulating layer that is in contact with an outer edge of the first electroconductive layer is formed;

a second insulating layer forming step of forming a second insulating layer that covers the first electroconductive layer and at least a part of the first insulating layer;

a step of forming an opening in the second insulating layer provided on the first electroconductive layer; and

a plating step of forming a second electroconductive layer on the first electroconductive layer by a plating method, in this order, wherein

the first electroconductive layer contains a low-melting-point material, and

in the step of forming the opening, heating treatment is carried out at an annealing temperature Ta that is higher than a thermal-fluidization onset temperature T 1 of the low-melting-point material, thereby the opening is formed in the second insulating layer.

8. The production method of the solar cell according to claim 7 , wherein a viscosity of the electroconductive paste is 50 to 400 Pa·s.

9. The production method of the solar cell according to claim 7 , wherein

the photoelectric conversion section comprises: a silicon-based thin-film; and a transparent electrode layer, in this order on a first principal surface of a crystalline silicon substrate, and

the collecting electrode is formed on the transparent electrode layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 17, 2015
From: HINO, MASASHI; ADACHI, DAISUKE
To: KANEKA CORPORATION
Reel/Frame 037064/0960 →
Priority Claims (1)
JP 2013-105530 · May 17, 2013 · national
Continuity (1)
Related Publication 20160126399A1 · May 5, 2016