Methods for producing low oxygen silicon ingots

1. A method for producing a silicon ingot, the method comprising:

melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt;

generating a cusped magnetic field within the vacuum chamber;

dipping a seed crystal into the melt; withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm); and

simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma), wherein the plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt,

wherein one of said process parameters comprises operating a heater positioned below the crucible at a power range from approximately 0 to 5 kilowatts.

2. A method in accordance with claim 1 , wherein the silicon ingot has a diameter in a range from approximately 150 mm to 460 mm.

3. A method in accordance with claim 1 , wherein the silicon ingot has a diameter of approximately 300 mm.

4. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises operating a heater positioned below the crucible at a power of approximately 0 kilowatts.

5. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises rotating the crucible at a rate in a range from approximately 1.3 rpm to 2.2 rpm.

6. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises rotating the crucible at a rate of approximately 1.7 rpm.

7. A method in accordance with claim 1 , wherein generating a cusped magnetic field comprises generating a cusped magnetic field having a magnetic field strength in a range from approximately 0.02 to 0.05 Tesla at an edge of the single crystal at a melt-solid interface, and having a magnetic field strength in a range from approximately 0.05 to 0.12 Tesla at a wall of the crucible.

8. A method in accordance with claim 1 , wherein the silicon ingot has a diameter of approximately 300 mm, and wherein simultaneously regulating a plurality of process parameters comprises withdrawing the seed crystal at a rate in a range from approximately 0.42 mm per minute to 0.55 mm per minute.

9. A method in accordance with claim 1 , wherein the silicon ingot has a diameter of approximately 300 mm, and wherein simultaneously regulating a plurality of process parameters comprises withdrawing the seed crystal at a rate of approximately 0.46 mm per minute.

10. A method in accordance with claim 1 , wherein the silicon ingot has a diameter of approximately 200 mm, and wherein simultaneously regulating a plurality of process parameters comprises withdrawing the seed crystal at a rate in a range from approximately 0.55 mm per minute to 0.85 mm per minute.

11. A method in accordance with claim 1 , wherein the silicon ingot has a diameter of approximately 200 mm, and wherein simultaneously regulating a plurality of process parameters comprises withdrawing the seed crystal at a rate of approximately 0.7 mm per minute.

12. A method for producing a silicon ingot, the method comprising:

melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt;

generating a cusped magnetic field within the vacuum chamber;

dipping a seed crystal into the melt withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm); and

simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma), wherein the plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt; wherein simultaneously regulating a plurality of process parameters comprises maintaining a melt to reflector gap in a range from approximately 60 mm to 80 mm.

13. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises maintaining a melt to reflector gap of approximately 70 mm.

14. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises flowing argon gas through the vacuum chamber at a flow rate in a range from approximately 100 standard liters per minute (slpm) to 150 slpm.

15. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises flowing argon gas through the vacuum chamber at a pressure in a range from approximately 10 torr to 30 torr.

16. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises rotating the seed crystal at a rate in a range from approximately 8 rpm to 14 rpm.

17. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises rotating the seed crystal at a rate of approximately 12 rpm.

18. A method for producing a silicon ingot, the method comprising:

melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt;

generating a cusped magnetic field within the vacuum chamber;

dipping a seed crystal into the melt withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm); and

simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma), wherein the plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt; wherein simultaneously regulating a plurality of process parameters comprises positioning a cusp of the generated magnetic field in a range from approximately 10 mm to 40 mm below a surface of the melt.

19. A method in accordance with claim 1 , wherein simultaneously regulating a plurality of process parameters comprises positioning a cusp of the generated magnetic field approximately 30 mm below a surface of the melt.

20. A method in accordance with claim 1 , further comprising measuring agglomerated point defects of the silicon ingot using laser light.

21. A method in accordance with claim 20 , wherein the measured defects include less than 400 defects having a size less than 60 nm, less than 100 defects having a size between 60 and 90 nm, and less than 100 defects having a size between 90 and 120 nm.

22. A method in accordance with claim 1 , further comprising doping the single crystal with one of nitrogen and carbon.

23. A method in accordance with claim 22 , wherein doping the single crystal comprises doping the single crystal with nitrogen such that a nitrogen concentration is within a range from 0 atoms per cubic centimeter to 8e15 atoms per cubic centimeter.

24. A method in accordance with claim 22 , wherein doping the single crystal comprises doping the single crystal with carbon such that a carbon concentration is within a range from 0.0 to 2.0 ppma.

25. A wafer generated from a silicon ingot that is produced using the method of claim 1 .

26. A wafer in accordance with claim 25 , wherein the wafer has 30 ohm-cm to 300 ohm-centimeter N-type resistivity such that the wafer is suitable for use in IGBT applications.

27. A wafer in accordance with claim 25 , wherein the wafer has greater than 750 ohm-cm N/P-type resistivity such that the wafer is suitable for use in IGBT applications.

28. A wafer in accordance with claim 25 , wherein the wafer has greater than 750 ohm-cm P-type resistivity such that the wafer is suitable for use in RF, HR-SOI, and CTL-SOI applications.

29. A wafer in accordance with claim 25 , wherein the wafer is a handle wafer.

30. A wafer in accordance with claim 25 , wherein the wafer is a P-type product having at least one of boron, aluminum, germanium, and indium as a majority carrier, and having at least one of red phosphorus, phosphorus, arsenic, and antimony as a minority carrier.

31. A wafer in accordance with claim 25 , wherein the wafer is a N-type product having at least one red phosphorus, phosphorus, arsenic, and antimony as a majority carrier, and having at least one of boron, aluminum, germanium, and indium as a minority carrier.

32. The method in accordance with claim 12 , further comprising doping the single crystal with one of nitrogen and carbon.

33. The method in accordance with claim 18 , further comprising doping the single crystal with one of nitrogen and carbon.

34. A wafer generated from a silicon ingot that is produced using the method of claim 12 .

35. A wafer generated from a silicon ingot that is produced using the method of claim 18 .