Method for producing SiC substrate
View Patent ↗A method that includes at least a CMP step of subjecting both a Si surface ( 1 a ) and a C surface ( 1 b ) of an SiC substrate ( 1 ) to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater.
1. A method for producing an SiC substrate that includes a step of polishing surfaces of the SiC substrate, wherein the method comprises at least:
a CMP step of subjecting both a Si surface and a C surface of the SiC substrate to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater.
2. The method for producing an SiC substrate according to claim 1 , wherein the SiC substrate is an SiC substrate prepared by stacking an epitaxial layer on the Si surface side of the substrate.
3. The method for producing an SiC substrate according to claim 1 , wherein the CMP step uses a potassium permanganate-based slurry comprising potassium permanganate as an oxidant and having a pH of 2 to 6.
4. The method for producing an SiC substrate according to claim 3 , wherein the CMP step uses, as the potassium permanganate-based slurry, a slurry comprising alumina as an abrasive.
5. The method for producing an SiC substrate according to claim 1 , wherein in the CMP step, a polishing load with which a polishing pad is pressed against the SiC substrate is within a range from 100 to 500 (g/cm 2 ).
6. The method for producing an SiC substrate according to claim 1 , wherein in the CMP step, a polishing rate of the Si surface of the SiC substrate is from 0.5 to 3.0 (μm/hr), and a polishing rate of the C surface is from 3 to 15 (μm/hr).
7. The method for producing an SiC substrate according to claim 1 , further comprising, prior to the CMP step, a rough polishing step of polishing the Si surface and the C surface of the SiC substrate using a mechanical polishing method.