Lithographic method
A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
1. A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and wherein the method further comprises applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
2. The method of claim 1 , wherein the lithographic apparatus is one of a plurality of lithographic apparatuses which receives the EUV radiation.
3. The method of claim 2 , wherein the variable attenuation of the EUV radiation is independently controllable for each of the lithographic apparatuses.
4. The method of claim 1 , wherein the variable attenuation is controlled by a second feedback-based control loop.
5. The method of claim 4 , wherein the second feedback-based control loop operates at a frequency of 1 kHz or less.
6. The method of claim 4 , wherein the second feedback-based control loop uses EUV radiation intensity as measured by a sensor located in the lithographic apparatus, the sensor being located before a projection system of the lithographic apparatus.
7. The method of claim 4 , wherein the second feedback-based control loop uses EUV radiation intensity as measured by a sensor located in the lithographic apparatus, the sensor being located after a projection system of the lithographic apparatus.
8. A lithographic system comprising a free electron laser configured to generate EUV radiation and a lithographic apparatus configured to project the EUV radiation onto lithographic substrates, wherein the apparatus further comprises a feedback-based control loop comprising a sensor configured to monitor the EUV radiation output by the free electron laser and a controller configured to receive an output from the sensor and to adjust operation of the free electron laser accordingly, and wherein the apparatus further comprises an attenuator configured to apply variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
9. The lithographic system of claim 8 , wherein the lithographic apparatus is one of a plurality of lithographic apparatuses which receives the EUV radiation.
10. The lithographic system of claim 9 , wherein an attenuator is provided for each lithographic apparatus, the attenuators being independently controllable for each of the lithographic apparatuses.
11. The lithographic system of claim 8 , wherein the variable attenuation is controlled by a second feedback-based control loop.
12. The lithographic system of claim 11 , wherein the second feedback-based control loop operates at a frequency of 1 kHz or less.
13. The lithographic system of claim 11 , wherein the second feedback-based control loop comprises a sensor configured to measure EUV radiation intensity in the lithographic apparatus.
14. The lithographic system of claim 13 , wherein the sensor is located before a projection system of the lithographic apparatus.
15. The lithographic system of claim 13 , wherein the sensor is located after a projection system of the lithographic apparatus.