Ion milling device and processing method using the ion milling device

1. An ion milling device provided with a vacuum chamber, an exhaust device for evacuating an interior of the vacuum chamber, and a sample stage for supporting a sample to be irradiated with an ion beam inside the vacuum chamber, comprising:

a heater for heating the interior of the vacuum chamber through gas;

a gas source for introducing a gas into the vacuum chamber; and

a controller receiving input information on a vacuum pressure in the vacuum chamber and on a temperature in the vacuum chamber for controlling the gas source,

wherein the controller controls the heater and the gas source so that vacuum chamber internal pressure is in a predetermined state and a vacuum chamber internal temperature is sufficient to avoid condensation within the vacuum chamber, with said vacuum chamber internal pressure below atmospheric pressure and above a pressure during irradiating with the ion beam, during heating by the heater.

2. The ion milling device according to claim 1 , wherein the controller controls the gas source and the exhaust device so that the vacuum chamber internal pressure is in the predetermined state.

3. The ion milling device according to claim 1 , wherein the gas to be introduced from the gas source into the vacuum chamber is a monatomic molecule rare gas.

4. The ion milling device according to claim 1 , further comprising:

a measuring instrument for measuring the vacuum chamber internal pressure,

wherein the controller controls the gas source so that output of the measuring instrument is in a predetermined condition.

5. The ion milling device according to claim 1 , further comprising:

a thermometer for measuring the vacuum chamber internal temperature,

wherein the controller controls the gas source until output of the thermometer indicates that the temperature is sufficient to avoid the condensation.

6. The ion milling device according to claim 1 , wherein the controller controls the gas source during heating by the heater so that the vacuum chamber internal pressure is 10E0 Pa to 10E-1 Pa.

7. The ion milling device according to claim 1 , wherein the sample stage is separated from the heater.

8. A processing method using the ion milling device according to claim 1 , comprising:

conducting ion beam irradiation processing by the ion milling device; and

after ion beam irradiation processing by the ion milling device, heating the interior of the vacuum chamber in a state in which the vacuum chamber internal pressure of the ion milling device is set in the predetermined state, with the vacuum chamber internal pressure lower than the atmosphere and higher than the pressure during the ion beam irradiation processing by the ion milling device.

9. The processing method using the ion milling device according to claim 8 , wherein the gas is introduced into the vacuum chamber to set the vacuum chamber internal pressure in the predetermined state during heating the interior of the vacuum chamber.

10. The processing method using the ion milling device according to claim 8 , wherein the interior of the vacuum chamber is evacuated to set the vacuum chamber internal pressure in the predetermined state during heating the interior of the vacuum chamber.

11. The processing method using the ion milling device according to claim 8 , wherein the gas is introduced into the vacuum chamber, and the interior of the vacuum chamber is evacuated, to set the vacuum chamber internal pressure in the predetermined state during heating the interior of the vacuum chamber.

12. The processing method using the ion milling device according to claim 8 , wherein a monatomic molecule rare gas is introduced into the vacuum chamber during heating the interior of the vacuum chamber.

13. The processing method using the ion milling device according to claim 8 , wherein the vacuum chamber internal pressure is set in the predetermined state until the vacuum chamber internal temperature is sufficient to avoid the condensation.