LED with stress-buffer layer under metallization layer
View Patent ↗Semiconductor LED layers are epitaxially gown on a patterned surface of a sapphire substrate ( 10 ). The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p-type layer and the n-type layer to form a p-metal contact ( 32 ) and an n-metal contact ( 33 ). A dielectric polymer stress-buffer layer ( 36 ) is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads ( 44, 45 ) are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.
1. A light emitting device comprising:
a substantially transparent growth substrate;
light emitting diode (LED) layers disposed on the substrate, the LED layers including a p-type layer and an n-type layer, the n-type layer being between the p-type layer and the growth substrate, wherein the LED layers are etched to expose the n-type layer for electrically connecting to an n-metal contact, wherein the etch also creates a trench surrounding the device;
a metal contact layer electrically contacting the p-type layer to form a p-metal contact;
a first dielectric layer formed over the metal contact layer that contacts the p-type layer, the first dielectric layer having a first opening that exposes the n-type layer, the first dielectric layer having a second opening that exposes the metal contact layer that contacts the p-type layer;
a first metal layer that contacts the metal contact layer for electrical connection to the p-type layer;
a second metal layer that contacts the n-type layer through the first opening in the first dielectric layer for electrical connection to the n-type layer,
wherein the first metal layer and the second metal layer are not planar;
a dielectric polymer stress-buffer layer disposed over the first metal layer, the second metal layer, the first dielectric layer, and the p-metal contact, the stress-buffer layer forming a substantially planar surface, the stress-buffer layer having two or more openings exposing a portion of the first metal layer and the second metal layer, wherein the stress-buffer layer at least partially fills the trench; and
metal solder pads disposed over the stress-buffer layer, wherein the metal solder pads are electrically connected to the first metal layer and the second metal layer through the openings in the stress-buffer layer, the metal solder pads being thicker than the first metal layer and the second metal layer.
2. The device of claim 1 wherein the stress-buffer layer is elastic so as to deform when the metal solder pads expand at a different rate than their underlying materials when heat is applied.
3. The device of claim 1 wherein the stress-buffer layer comprises BenzoCycloButene (BCB).
4. The device of claim 1 wherein the growth substrate has a growth surface on which the LED layers are epitaxially grown, wherein the growth surface is patterned prior to growing the LED layers.
5. The device of claim 1 further comprising a passivation layer between the stress-buffer layer and the p-metal contact and the n-metal contact.
6. The device of claim 1 wherein the device is a flip-chip LED.
7. The device of claim 1 further comprising solder bumps on the solder pads.
8. The device of claim 1 wherein the substrate comprises sapphire and the LED is GaN based.
9. The device of claim 1 wherein the one or more metal contact layers comprise a metal contact layer in physical contact with one of the p-type layer and the n-type layer, and an interface layer between the contact layer and the solder pads.
10. The device of claim 1 wherein the solder pads comprise multiple metal layers.
11. A method for forming a light emitting device comprising:
epitaxially growing light emitting diode (LED) layers on a substantially transparent growth substrate, the LED layers including a p-type layer and an n-type layer the n-type layer being between the p-type layer and the growth substrate;
etching the LED layers to expose the n-type layer for electrically connecting to an n-metal contact, wherein the etch also creates trench surrounding the device;
depositing and patterning a metal contact layer electrically contacting the p-type layer to form the p-metal contact;
forming a first dielectric layer over the metal contact layer that contacts the p-type layer, the first dielectric layer having a first opening that exposes the n-type layer, the first dielectric layer having a second opening that exposes the metal contact layer that contacts the p-type layer;
forming a first metal layer that contacts the metal contact layer for electrical connection to the p-type layer;
forming a second metal layer that contacts the n-type layer through the first opening in the first dielectric layer for electrical connection to the n-type layer,
wherein the first metal layer and the second metal layer are not planar;
depositing a dielectric polymer stress-buffer layer over the first metal layer, the second metal layer, the first dielectric layer, and the p-metal contact, the stress-buffer layer forming a substantially planar surface, the stress-buffer layer having two or more openings exposing a portion of the first metal layer and the second metal layer, wherein the stress-buffer layer at least partially fills the trench; and
forming metal solder pads over the stress-buffer layer, the metal solder pads electrically contacting the first metal layer and the second metal layer through the openings in the stress-buffer layer, the metal solder pads being thicker than the first metal layer and the second metal layer.
12. The method of claim 11 wherein the stress-buffer layer is elastic so as to deform when the metal solder pads expand at a different rate than their underlying materials when heat is applied.
13. The method of claim 11 wherein the stress-buffer layer comprises BenzoCycloButene (BCB).