IP Library Granted Patent US 9,490,815
Granted Patent B2
US 9,490,815 · App. 14/903,428 · Granted Nov 8, 2016

Robust, low power, reconfigurable threshold logic array

Inventors: Sarma Vrudhula (Chandler, AZ); Niranjan Kulkarni (Tempe, AZ)
Assignee: Arizona Board of Regents on behalf of Arizona State University
H03K19/1778H03K19/0013H03K19/17736H03K19/17768H03K19/23
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Quick Facts
Patent No.
US 9,490,815
App. No.
14/903,428
Granted
Nov 8, 2016
Kind
B2
Abstract

A field programmable threshold-logic array (FPTLA) includes a number of threshold logic gates and a number of programmable interconnect elements. Each one of the programmable interconnect elements are connected between two or more of the threshold logic gates, such that the programmable interconnect elements route signals between the threshold logic gates. By using threshold logic gates for the FPTLA, the size of the FPTLA may be significantly smaller than conventional solutions. Further, using threshold logic gates results in significant improvements in the computation speed of the FPTLA when compared to conventional solutions.

Claims (85)

1. A field programmable threshold-logic array (FPTLA) comprising:

a plurality of threshold logic gates;

a plurality of programmable interconnect elements each coupled between at least two of the plurality of threshold logic gates and configured to route signals between the plurality of threshold logic gates.

2. The FPTLA of claim 1 wherein each one of the plurality of threshold logic gates is a differential threshold logic gate.

3. The FPTLA of claim 2 wherein each one of the plurality of threshold logic gates is configured to evaluate a majority function.

4. The FPTLA of claim 1 wherein each one of the plurality of threshold logic gates comprises:

a first input network configured to receive a first plurality of input signals and generate a first activation signal at a speed proportional to a combined value of the first plurality of input signals;

a second input network configured to receive a second plurality of input signals and generate a second activation signal at a speed proportional to a combined value of the second plurality of input signals;

a differential amplifier coupled between the first input network and the second input network and configured to:

receive the first activation signal and the second activation signal;

generate a differential output signal having a first state if the first activation signal is received before the second activation signal; and

generate a differential output signal having a second state if the second activation signal is received before the first activation signal; and

a latch configured to receive the differential output signal from the differential amplifier and generate a latched output signal based on the state of the differential output signal.

5. The FPTLA of claim 4 wherein each one of the first plurality of input signals is equal to a complement of a corresponding one of the second plurality of input signals.

6. The FPTLA of claim 4 wherein:

the first input network comprises a first plurality of transistors coupled in parallel between a first input control node and a first activation signal node; and

the second input network comprises a second plurality of transistors coupled in parallel between a second input control node and a second activation signal node.

7. The FPTLA of claim 6 wherein the first plurality of transistors and the second plurality of transistors are metal-oxide-semiconductor field-effect-transistors (MOSFETs).

8. The FPTLA of claim 6 wherein:

in a reset state of operation of the first input network and the second input network, the first input control node and the second input control node are left floating and the first activation signal node and the second activation signal node are coupled to ground; and

in a set state of operation of the first input network and the second input network, the first input control node and the second input control node are connected to a power supply voltage and the first activation signal node and the second activation signal node are left floating.

9. The FPTLA of claim 6 wherein the differential amplifier comprises:

a first differential input node, a second differential input node, a first differential output node, and a second differential output node;

a first transistor including a source contact coupled to ground, a drain contact, and a gate contact coupled to the first differential input node;

a second transistor including a source contact coupled to the drain contact of the first transistor, a drain contact coupled to the first differential output node, and a gate contact coupled to the second output node;

a third transistor including a source contact coupled to a power supply voltage, a drain contact coupled to the first differential output node, and a gate contact coupled to the second differential output node;

a fourth transistor including a source contact coupled to the power supply voltage, a drain contact coupled to the first differential output node, and a gate contact coupled to the first input node;

a fifth transistor including a source contact coupled to ground, a drain contact, and a gate contact coupled to the second differential input node;

a sixth transistor including a source contact coupled to the drain contact of the fifth transistor, a drain contact coupled to the second differential output node, and a gate contact coupled to the first differential output node;

a seventh transistor including a source contact coupled to the power supply voltage, a drain contact coupled to the first differential output node, and a gate contact coupled to the first differential output node; and

an eighth transistor including a source contact coupled to the power supply voltage, a drain contact coupled to the second differential output node, and a gate contact coupled to the second differential input node.

10. The FPTLA of claim 9 wherein the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are metal-oxide-semiconductor field-effect-transistors (MOSFETs).

11. The FPTLA of claim 9 wherein the latch is a set-reset (SR) NOR latch.

12. The FPTLA of claim 9 wherein:

the first input network comprises a first plurality of transistors coupled in parallel between a first input control node and a first activation signal node; and

the second input network comprises a second plurality of transistors coupled in parallel between a second input control node and a second activation signal node.

13. The FPTLA of claim 12 wherein the first activation signal node is coupled to the first differential input node and the second activation signal node is coupled to the second differential input node.

14. The FPTLA of claim 13 wherein:

in a reset state of operation of the first input network and the second input network, the first input control node and the second input control node are left floating and the first activation signal node and the second activation signal node are coupled to ground; and

in a set state of operation of the first input network and the second input network, the first input control node and the second input control node are connected to a power supply voltage and the first activation signal node and the second activation signal node are left floating.

15. The FPTLA of claim 14 wherein the latch comprises:

a set input node coupled to the first differential output node;

a reset input node coupled to the second differential output node; and

one or more output nodes.

16. The FPTLA of claim 15 wherein the node is a set-reset (SR) NOR latch.

17. A differential threshold logic gate (DTG) comprising:

a first input network configured to receive a first plurality of input signals and generate a first activation signal at a speed proportional to a combined value of the first plurality of input signals;

a second input network configured to receive a second plurality of input signals and generate a second activation signal at a speed proportional to a combined value of the second plurality of input signals;

a differential amplifier coupled between the first input network and the second input network and configured to:

receive the first activation signal and the second activation signal;

generate a differential output signal having a first state if the first activation signal is received before the second activation signal; and

generate a differential output signal having a second state if the second activation signal is received before the first activation signal; and

a latch configured to receive the differential output signal from the differential amplifier and generate a latched output signal based on the state of the differential output signal.

18. The DTG of claim 17 wherein each one of the first plurality of input signals is equal to a complement of a corresponding one of the second plurality of input signals.

19. The DTG of claim 17 wherein:

the first input network comprises a first plurality of input transistors coupled in parallel between a first input control node and a first activation signal node; and

the second input network comprises a second plurality of input transistors coupled in parallel between a second input control node and a second activation signal node.

20. The DTG of claim 19 wherein the first plurality of transistors and the second plurality of transistors are metal-oxide-semiconductor field-effect-transistors (MOSFETs).

21. The DTG of claim 19 wherein:

in a reset state of operation of the first input network and the second input network, the first input control node and the second input control node are left floating and the first activation signal node and the second activation signal node are coupled to ground; and

in a set state of operation of the first input network and the second input network, the first input control node and the second input control node are connected to a power supply voltage and the first activation signal node and the second activation signal node are left floating.

22. The DTG of claim 17 wherein the differential amplifier comprises:

a first differential input node, a second differential input node, a first differential output node, and a second differential output node;

a first transistor including a source contact coupled to ground, a drain contact, and a gate contact coupled to the first differential input node;

a second transistor including a source contact coupled to the drain contact of the first transistor, a drain contact coupled to the first differential output node, and a gate contact coupled to the second differential output node;

a third transistor including a source contact coupled to a power supply voltage, a drain contact coupled to the first differential output node, and a gate contact coupled to the second differential output node;

a fourth transistor including a source contact coupled to the power supply voltage, a drain contact coupled to the first differential output node, and a gate contact coupled to the first differential input node;

a fifth transistor including a source contact coupled to ground, a drain contact, and a gate contact coupled to the second differential input node;

a sixth transistor including a source contact coupled to the drain contact of the fifth transistor, a drain contact coupled to the second differential output node, and a gate contact coupled to the first differential output node;

a seventh transistor including a source contact coupled to the power supply voltage, a drain contact coupled to the second differential output node, and a gate contact coupled to the first differential output node; and

an eighth transistor including a source contact coupled to the power supply voltage, a drain contact coupled to the second differential output node, and a gate contact coupled to the second differential input node.

23. The DTG of claim 22 wherein the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are metal-oxide-semiconductor field-effect-transistors (MOSFETs).

24. The DTG of claim 22 wherein the latch is a set-reset (SR) NOR latch.

25. The DTG of claim 22 wherein:

the first input network comprises a first plurality of transistors coupled in parallel between a first input control node and a first activation signal node; and

the second input network comprises a second plurality of transistors coupled in parallel between a second input control node and a second activation signal node.

26. The DTG of claim 25 wherein the first activation signal node is coupled to the first differential input node and the second activation signal node is coupled to the second differential input node.

27. The DTG of claim 26 wherein:

in a reset state of operation of the first input network and the second input network, the first input control node and the second input control node are left floating and the first activation signal node and the second activation signal node are coupled to ground; and

in a set state of operation of the first input network and the second input network, the first input control node and the second input control node are connected to a power supply voltage and the first activation signal node and the second activation signal node are left floating.

28. The DTG of claim 27 wherein the latch comprises:

a set input node coupled to the first differential output node;

a reset input node coupled to the second differential output node; and

one or more output nodes.

29. The DTG of claim 28 wherein the latch is a set-reset (SR) NOR latch.

Assignments (2)
CONFIRMATORY LICENSE Recorded Aug 1, 2016
From: ARIZONA STATE UNIVERSITY, TEMPE
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 039516/0330 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 7, 2016
From: VRUDHULA, SARMA; KULKARNI, NIRANJAN
To: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
Reel/Frame 037431/0269 →
Continuity (2)
Provisional Application 61843652 · Jul 8, 2013
Related Publication 20160164526A1 · Jun 9, 2016