Wavelength converted semiconductor light emitting device
View Patent ↗In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.
1. A light emitting device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a first wavelength converting layer disposed in a path of light emitted by the light emitting layer, wherein the first wavelength converting layer comprises a wavelength converting ceramic; and
a second wavelength converting layer fused to the first wavelength converting layer, wherein the second wavelength converting layer comprises a wavelength converting material disposed in glass, wherein the first wavelength converting layer is disposed between the second wavelength converting layer and the semiconductor structure.
2. The light emitting device of claim 1 wherein the first wavelength converting layer emits red light and the second wavelength converting layer emits green light.
3. The light emitting device of claim 1 wherein the first wavelength converting layer and the second wavelength converting layer have angled sidewalls.
4. The light emitting device of claim 1 wherein:
the first wavelength converting layer and the second wavelength converting layer form a wavelength converting member;
a first portion of the wavelength converting member has a substantially vertical sidewall; and
a second portion of the wavelength converting member has an angled sidewall.
5. The light emitting device of claim 1 further comprising a reflective material, wherein the reflective material is disposed adjacent each of a sidewall of the first wavelength converting layer, a sidewall of the second wavelength converting layer, and a sidewall of the semiconductor structure.
6. The light emitting device of claim 1 wherein a surface of the first wavelength converting layer that is fused to the second wavelength converting layer is one of roughened, patterned, and textured.
7. The light emitting device of claim 1 wherein the first wavelength converting layer has a substantially uniform thickness.
8. The light emitting device of claim 1 wherein the first wavelength converting layer is no wider than the semiconductor structure.