Fluorinated polymer dots
This disclosure provides semiconducting polymer dots (Pdots) for use in a wide variety of applications. In particular, this disclosure provides Pdots that are halogenated, including fluorinated Pdots. This disclosure also provides methods for synthesizing Pdots and methods for using Pdots, such as for biological imaging.
1. A composition comprising a fluorinated semiconducting polymer dot comprising a semiconducting polymer, wherein:
the semiconducting polymer comprises a repeating subunit having a structure
wherein the fluorinated semiconducting polymer dot has a greater quantum yield upon exposure to light than a quantum yield obtained from an analogous non-fluorinated semiconducting polymer dot upon exposure to light; and
wherein the fluorinated semiconducting polymer dot has decreased non-specific binding than an analogous non-fluorinated semiconducting polymer dot.
2. The composition of claim 1 , wherein the fluorinated semiconducting polymer dot is blended with an amphiphilic polymer.
3. The composition of claim 1 , wherein a quantum yield of the fluorinated semiconducting polymer dot is greater than 10%.
4. The composition of claim 1 , wherein an absorption peak of the fluorinated semiconducting polymer dot is at a wavelength greater than 350 nm.
5. The composition of claim 1 , wherein a photoluminescence peak of the fluorinated semiconducting polymer dot is at a wavelength greater than 410 nm.
6. The composition of claim 1 , wherein a size of the fluorinated semiconducting polymer dot is less than 60 nm.
7. The composition of claim 1 , wherein the semiconducting polymer has greater than 10 subunits.
8. A composition comprising a fluorinated semiconducting polymer dot comprising a semiconducting polymer, wherein:
the semiconducting polymer comprises a repeating subunit having a structure
wherein the polymer dot further comprises polystyrene polyethylene glycol carboxylic acid,
wherein the fluorinated semiconducting polymer dot has a greater quantum yield upon exposure to light than a quantum yield obtained from an analogous non-fluorinated semiconducting polymer dot upon exposure to light; and
wherein the fluorinated semiconducting polymer dot has decreased non-specific binding than an analogous non-fluorinated semiconducting polymer dot.
9. The composition of claim 8 , wherein the composition has a quantum yield upon exposure to light that is at least two times greater than a quantum yield obtained from an analogous non-fluorinated semiconducting polymer dot upon exposure to light.
10. The composition of claim 8 , wherein the polymer dot comprises a blend of the semiconducting polymer and the polystyrene polyethylene glycol carboxylic acid.