Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications
Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L 1 , L 2 , L 3 and L 4 is independently selected from oxygen or nitrogen atoms; L 1 and L 2 are joined together via a carbon bridge having one to three carbon atoms; L 3 and L 4 are joined together via a carbon bridge having one to three carbon atoms; L 1 , L 2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and L 3 , L 4 and the carbon bridge form a monoanionic ligand bonded to silicon.
1. A hexacoordinate silicon-containing molecule having the following formula:
wherein
each L 1 , L 2 , L 3 and L 4 is a nitrogen atom;
L 1 and L 2 are joined together via a carbon bridge having one to three carbon atoms;
L 3 and L 4 are joined together via a carbon bridge having one to three carbon atoms;
L 1 , L 2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and
L 3 , L 4 and the carbon bridge form a monoanionic ligand bonded to silicon.
2. The hexacoordinate silicon-containing molecule of claim 1 , wherein the molecule has the following formula:
wherein R 1 , R 2 , R 3 , R 4 , R 5 and R 6 is each independently H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group.
3. The hexacoordinate silicon-containing molecule of claim 1 , wherein the molecule has the following formula:
wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 is each independently H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group.
4. The hexacoordinate silicon-containing molecule of claim 1 , wherein the molecule has the following formula:
wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is each independently H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group.
5. The hexacoordinate silicon-containing molecule of claim 1 , wherein the molecule has the following formula:
wherein R 1 , R 2 , R 3 , and R 4 is each independently H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, and each X is independently Cl, Br, I, or F.
6. The hexacoordinate silicon-containing molecule of claim 1 , wherein the molecule has the following formula:
wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 is each independently H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group.
7. The hexacoordinate silicon-containing molecule of claim 1 , wherein the molecule has the following formula:
wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , and R 10 is each independently H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group.
8. A method of deposition a Si-containing layer on a substrate, the method comprising:
introducing a vapor of the hexacoordinate silicon-containing molecule of claim 1 into a reactor having a substrate disposed therein; and
depositing at least part of the organosilane precursor onto the substrate to form a Si-containing layer using a vapor deposition method.
9. The method of claim 8 , further comprising introducing a co-reactant into the reactor.
10. The method of claim 8 , wherein the vapor deposition process is a chemical vapor deposition process.
11. The method of claim 8 , wherein the vapor deposition process is an atomic layer deposition (ALD) process.
12. The method of claim 8 , wherein the hexacoordinate silicon-containing molecule has the following formula:
wherein R 1 , R 2 , R 3 , R 4 , R 5 and R 6 is each independently H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group.
13. The method of claim 8 , wherein the hexacoordinate silicon-containing molecule is SiH 2 (N iPr -amd) 2 .
14. The hexacoordinate silicon-containing molecule of claim 2 , wherein the hexacoordinate silicon-containing molecule is SiH 2 (N iPr -amd) 2 .