A pixel circuit includes a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type. The source/drain and the drain/source touch the floating diffusion layer. A cathode of a photoelectric converter is electrically connected to the floating diffusion layer. An anode of the photoelectric converter touches the cathode. The cathode is of the first conductivity-type and the anode is of the second conductivity-type.
1. A pixel circuit comprising:
a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type, said source/drain and said drain/source touching said floating diffusion layer;
a cathode of a photoelectric converter electrically connected to said floating diffusion layer, said cathode being of said first conductivity-type;
an anode of the photoelectric converter touching said cathode, said anode being of said second conductivity-type; and
a different floating diffusion layer of the first conductivity-type directly electrically connected to said cathode.
2. The pixel circuit according to claim 1 , wherein said different floating diffusion layer is between a different drain/source of the second conductivity-type and said source/drain.
3. The pixel circuit according to claim 2 , wherein said source/drain and said different drain/source touch said different floating diffusion layer.
4. The pixel circuit according to claim 2 , further comprising:
a source of a selection transistor electrically connected to said drain/source.
5. The pixel circuit according to claim 4 , wherein said source of the selection transistor is electrically connected to said different drain/source.
6. The pixel circuit according to claim 4 , further comprising:
a drain of the selection transistor electrically connected to a signal line.
7. The pixel circuit according to claim 1 , further comprising:
a gate insulation film between said floating diffusion layer and a gate electrode.
8. The pixel circuit according to claim 7 , wherein said gate insulation film is between said floating diffusion layer and a different gate electrode.
9. A pixel circuit comprising:
a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type, said source/drain and said drain/source touching said floating diffusion layer;
a cathode of a photoelectric converter electrically connected to said floating diffusion layer, said cathode being of said first conductivity-type;
an anode of the photoelectric converter touching said cathode, said anode being of said second conductivity-type;
wherein an impurity concentration of the first conductivity-type in said floating diffusion layer is higher than an impurity concentration of the first conductivity-type in said cathode.
10. The pixel circuit according to claim 9 , wherein said cathode touches said floating diffusion layer.
11. The pixel circuit according to claim 9 , wherein said cathode is between said floating diffusion layer and said anode.
12. The pixel circuit according to claim 9 , wherein said anode is configured to receive light, said photoelectric converter being configured to convert said light into an electric charge.
13. The pixel circuit according to claim 9 , further comprising:
a reset transistor controllable to provide electrical connection and disconnection between said floating diffusion layer and a power-supply potential.
14. The pixel circuit according to claim 9 , wherein said first conductivity-type is of a conductivity opposite to said second conductivity-type.
15. The pixel circuit according to claim 9 , wherein said first conductivity-type is n-type.
16. The pixel circuit according to claim 9 , wherein said second conductivity-type is p-type.
17. The pixel circuit according to claim 9 , wherein an impurity concentration of the second conductivity-type in said source/drain is higher than an impurity concentration of the second conductivity-type in said anode.
18. The pixel circuit according to claim 17 , wherein said impurity concentration of the second conductivity-type in said anode is lower than an impurity concentration of the second conductivity-type in said drain/source.
19. A pixel circuit comprising
a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type, said source/drain and said drain/source touching said floating diffusion layer
a cathode of a photoelectric converter electrically connected to said floating diffusion layer, said cathode being of said first conductivity-type
an anode of the photoelectric converter touching said cathode, said anode being of said second conductivity-type; and
a first layer of the first conductivity-type in a second layer of the second conductivity-type, said second layer being between said floating diffusion layer and another floating diffusion layer of the first conductivity-type.