Electro-assisted transfer and fabrication of wire arrays
View Patent ↗A fabrication method includes: (1) forming a wire array on a fabrication substrate; (2) forming a porous layer within a portion of the fabrication substrate below the wire array; (3) separating the porous layer and the wire array from a remaining portion of the fabrication substrate; and (4) affixing top ends of the wire array to a target substrate.
1. A fabrication method, comprising:
providing a substrate including a first side and an opposite, second side;
forming a patterned catalyst layer over the second side of the substrate;
providing (a) a first electrode adjacent to the first side of the substrate and (b) a second electrode adjacent to the patterned catalyst layer; and
applying a current between the first electrode and the second electrode and through the substrate in the presence of an etchant to form a wire array, wherein the current supplies charge carriers as oxidizing species that move toward the patterned catalyst layer, such that a material of the substrate adjacent to the patterned catalyst layer is oxidized and removed in the presence of the etchant.
2. The fabrication method of claim 1 , wherein the substrate is a Si wafer, and the wire array is an array of Si nanowires.
3. The fabrication method of claim 1 , wherein the substrate is a Si wafer, and the wire array is an array of Si microwires.
4. The fabrication method of claim 1 , wherein the etchant is devoid of a chemical oxidant.
5. The fabrication method of claim 1 , wherein applying the current includes modulating the current over time between a high current density and a low current density while forming the wire array.
6. The fabrication method of claim 5 , wherein the wire array has an axially modulated porosity.
7. The fabrication method of claim 5 , wherein the wire array has an axially modulated orientation.
8. The fabrication method of claim 1 , wherein forming the patterned catalyst layer over the second side of the substrate includes:
depositing discrete, masking structures over the second side of the substrate;
depositing a catalyst layer over and in between the discrete, masking structures; and
removing the discrete, masking structures to form the patterned catalyst layer.