Processes for synthesizing nanocrystals
A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSe x A y [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
1. A nanoparticle including a nanocrystal of a compound represented by Chemical Formula 1 or Chemical Formula 1-1:
GaSe x A y [Chemical Formula 1]
GaSe x [Chemical Formula 1-1]
wherein x is about 1.1 to 3, y is about 0.1 to 4, and A is S, Te, N, P, As, Al, In, Zn, Cd, Mg, Mn, Ag, Au, or a combination thereof,
wherein the nanoparticle has a multishell structure, and wherein the nanocrystal of the compound represented by Chemical Formula 1 or Chemical Formula 1-1 is present as an interlayer between a Group III-V semiconductor nanocrystal and a Group II-VI semiconductor nanocrystal.
2. The nanoparticle of claim 1 , wherein the nanocrystal of the compound represented by Chemical Formula 1 has an atomic ratio of Se with respect to Ga of at least about 1.2.
3. The nanoparticle of claim 1 , wherein the Group III-V semiconductor nanocrystal comprises:
a binary element compound,
a ternary element compound,
a quaternary element compound, or a combination thereof.
4. The nanoparticle of claim 1 , wherein the Group II-VI compound comprises
a binary element compound,
a ternary element compound,
a quaternary element compound, or a combination thereof.
5. The nanoparticle of claim 1 , wherein the nanocrystal of the compound represented by Chemical Formula 1 has a zinc blend crystal structure.
6. The nanoparticle of claim 3 , wherein
the binary element compound comprises GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or a combination thereof,
the ternary element compound comprises GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, or a combination thereof, and
the quaternary element compound comprises GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or a combination thereof.
7. The nanoparticle of claim 4 , wherein
the binary element compound comprises CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, or a combination thereof,
the ternary element compound comprises CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or a combination thereof, and
a quaternary element compound comprises HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or a combination thereof.
8. A nanoparticle including a nanocrystal of a compound represented by Chemical Formula 1 or Chemical Formula 1-1:
GaSe x A y [Chemical Formula 1]
GaSe x [Chemical Formula 1-1]
wherein x is about 1.1 to 1.36, y is about 0.1 to 4, and A is S, Te, N, P, As, Al, In, Zn, Cd, Mg, Mn, Ag, Au, or a combination thereof wherein the nanoparticle has a multishell structure, and wherein the nanocrystal of the compound represented by Chemical Formula 1 or Chemical Formula 1-1is present as an interlayer between a Group III-V semiconductor nanocrystal and a Group II-VI semiconductor nanocrystal.
9. A process for synthesizing the nanocrystal of claim 1 , the process comprising:
contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and
reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and with a third precursor including an element other than gallium and selenium, to prepare the nanocrystal represented by Chemical Formula 1, or reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound to prepare the nanocrystal represented by Chemical Formula 1-1:
GaSe x A y [Chemical Formula 1]
GaSe x [Chemical Formula 1-1]
wherein A is S, Te, N, P, As, Al, In, Zn, Cd, Mg, Mn, Ag, Au, or a combination thereof,
wherein x is about 1.1 to 3, and y is about 0.1 to 4,
wherein the reacting the Ga—Se precursor comprises reacting the Ga—Se precursor in the presence of a first nanocrystal to form a shell of the Ga—Se nanocrystal on a surface of the first nanocrystal, and
the first nanocrystal is a Group III-V semiconductor nanocrystal core, or is a core-shell semiconductor nanocrystal having a shell comprising a Group III-V semiconductor nanocrystal.
10. The process of claim 9 , wherein the first precursor comprises a trialkyl gallium, gallium acetylacetonate, a gallium halide, a gallium oxide, a gallium alkoxide, or a combination thereof.
11. The process of claim 9 , wherein the second precursor is a complex of selenium with a dialkylphosphine, a diarylphosphine, a trialkylphosphine, a trialkylphosphine oxide, or a combination thereof, a bis(trialkylsilyl)selenide, or a combination thereof.
12. The process of claim 9 , wherein the solvent is a C6 to C22primary alkyl amine, a C6 to C22 secondary alkyl amine, a C6 to C40 tertiary alkyl amine, a heterocyclic compound having a nitrogen atom, a C6 to C40 olefin, a C6 to C40 aliphatic hydrocarbon, an aromatic hydrocarbon substituted with a C6 to C30 alkyl group, a phosphine substituted with a C6 to C22 alkyl group, a phosphine oxide substituted with a C6 to C22 alkyl group, a C12 to C22 aromatic ether, or a combination thereof.
13. The process of claim 9 , wherein the ligand compound is RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3 P, ROH, RCOOR′, RCOOCOR′, or a combination thereof, wherein R and R′ are each independently a C1 to C24 alkyl group, a C2 to C24 alkenyl group, or a C5 to C24 aryl group.
14. The process of claim 9 , wherein the element other than gallium and selenium of the third precursor is S, Te, N, P, As, Al, In, Zn, Cd, Mg, Mn, Cu, Ag, Au, or a combination thereof.
15. The process of claim 9 , wherein an atomic ratio of Se with respect to Ga in the Ga—Se nanocrystal is at least about 1.2.