IP Library Granted Patent US 9,947,842
Granted Patent B2
US 9,947,842 · App. 14/914,648 · Granted Apr 17, 2018

Manufacturing method for quantum dot color film substrate and quantum dot color film substrate

Inventor: Dongze Li (Shenzhen, CN)
Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
H01L33/507H01L33/44H01L33/502H01L33/56H01L2933/005H01L2933/0025H01L2933/0041
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Quick Facts
Patent No.
US 9,947,842
App. No.
14/914,648
Granted
Apr 17, 2018
Kind
B2
Abstract

The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to form a quantum dot adhesive by mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting adhesive. The photoinitiator itself does not destroy fluorescence properties of quantum dot, but the photoinitiator is cleaved and can quenching the fluorescence of quantum dot after UV irradiation. A selective quenching quantum dot layer is obtained after coating a quantum dot adhesive uniformly on a color filter layer, and the light mask is used to irradiate the quantum dot adhesive on the blue sub-pixel region. Free radicals are generated by cleaving photoinitiator and are quenching the quantum dot material directly; the method is capable of meeting requirement of high gamut, simple preparation process and low cost.

Claims (13)

1. A method for manufacturing quantum dot color film substrate comprises the following steps:

Step 1, providing a substrate, and the substrate comprising a red sub-pixel region, a green sub-pixel region and a blue sub-pixel region;

Step 2, forming a patterned red colored barrier layer, a patterned green colored barrier layer and a patterned organic transparent photoresist layer on the substrate corresponding to the red sub-pixel region, the green sub-pixel region and the blue sub-pixel region to obtain a color filter layer comprising a red colored barrier layer, a green colored barrier layer and an organic transparent photoresist layer;

Step 3, coating a quantum dot adhesive on the color filter layer and then heat-curing the quantum dot adhesive;

the quantum dot adhesive is a thermosetting adhesive, comprising a red quantum dot material, green quantum dot material and a photoinitiator; the photoinitiator is a UV-initiator capable of quenching quantum dot material by UV irradiation;

Step 4, providing a light mask during a heat-curing process, the light mask comprises a non-transmitting portion corresponding to the red sub-pixel region and the green sub-pixel region, a transmitting portion corresponding to the blue sub-pixel region; using the light mask to irradiate the quantum dot adhesive on the blue sub-pixel region by using ultraviolet light, the photoinitiator in the quantum dot adhesive on the blue sub-pixel region quenching a quantum dot material by ultraviolet light illumination, but the quantum dot material in the quantum dot adhesive on the red sub-pixel region and the green sub-pixel region not being affected by ultraviolet light illumination;

Step 5, obtaining a selective quenching quantum dot layer after heat-curing; resulting in a color film substrate comprising a substrate, a color filter and a quantum dot layer; the quantum dot layer comprising a first quantum dot layer on the red sub-pixel region and the green sub-pixel region and a second quantum dot layer on the blue sub-pixel region;

a red quantum dot material and a green quantum dot material in the first quantum dot layer capable of emitting red and green light under excitation of blue light; a quantum dot material in the second quantum dot layer does not emit light under illumination.

2. The method for manufacturing quantum dot color film substrate according to claim 1 , wherein the photoinitiator is benzoin dimethyl ether or benzoyl methyl formate.

3. The method for manufacturing quantum dot color film substrate according to claim 1 , wherein in the step 3, thickness of the quantum dot adhesive coated on the color filter layer is 0.5-20 μm.

4. The method for manufacturing quantum dot color film substrate according to claim 1 , further comprising step 6, a filter layer is formed on the first quantum dot layer to filter out blue light below 400 nm wavelength, for preventing the photoinitiator in the first quantum dot layer quenches the quantum dot material by ultraviolet illumination.

5. The method for manufacturing quantum dot color film substrate according to claim 1 , wherein the quantum dot material in the quantum dot adhesive is group II-VI quantum dot material and one or more of group I-III-VI quantum dot material in one or more.

6. The method for manufacturing quantum dot color film substrate according to claim 5 , wherein the quantum dot material in the quantum dot adhesive is ZnCdSe 2 , CdSe, CdTe, CuInS 2 and one or more of ZnCuInS 3 in one or more.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2016
From: LI, DONGZE
To: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 037834/0382 →
Priority Claims (1)
CN 2015 1 0779411 · Nov 13, 2015 · national
Continuity (1)
Related Publication 20170256686A1 · Sep 7, 2017