Method for the correction of electron proximity effects

1. A method for projecting an electron beam onto a target comprising:

correcting, at an electron beam lithography system, electron scattering effects in the target,

wherein:

the correction of the electron scattering effects in the target comprises calculating a point spread function modelling an interaction of the electron beam with the target, wherein the point spread function models a radial variation of an energy of the electron beam or a dose of the electron beam deposited in the target by means of a piecewise polynomial function that defines an interval that is divided into at least two sub-intervals, each sub-interval being associated with a polynomial function different from another polynomial function associated with adjacent sub-interval.

2. The method according to claim 1 , wherein the correction of the electron scattering effects in the target comprises modulation of the dose of the electron beam deposited in the target.

3. The method according to claim 1 , wherein the correction of the electron scattering effects in the target comprises modulation of a geometry of a portion of the target receiving the electron beam.

4. The method according to claim 2 , wherein the correction of the electron scattering effects in the target comprises modulation of a geometry of a portion of the target receiving the electron beam.

5. The method according to claim 1 , wherein the radial variation of the point spread function is a piecewise cubic polynomial.

6. The method according to claim 2 , wherein the radial variation of the point spread function is a piecewise cubic polynomial.

7. The method according to claim 3 , wherein the radial variation of the point spread function is a piecewise cubic polynomial.

8. The method according to claim 4 , wherein the radial variation of the point spread function is a piecewise cubic polynomial.

9. The method according to claim 5 , wherein the radial variation of the point spread function is defined over an interval [a, b] belonging to the set of real numbers , and in that the radial variation complies with the limit conditions called natural conditions so that the second derivatives of the radial variation at the ends of the interval [a, b] are zero.

10. The method according to claim 1 , wherein the piecewise polynomial function is defined by coefficients α i,j , said coefficients α i,j being chosen to optimize interpolation of the result of a reference probabilistic simulation of the electron scattering originating from the electron beam in the target, by the radial variation of the point spread function.

11. The method according to claim 1 , wherein the piecewise polynomial function is defined by coefficients α i,j , said coefficients α i,j being chosen to optimize interpolation of the experimental results representing scattering of the electrons originating from the electron beam in the target, by the radial variation of the point spread function.

12. An electron beam lithography device comprising:

a module for accelerating and projecting an electron beam onto a target; and

a computing module configured to correct the electron scattering effects in the target;

wherein:

the computing module is configured to calculate a point spread function modelling an interaction of the electron beam with the target, wherein the point spread function models a radial variation of an energy of the electron beam or a dose of the electron beam deposited in the target by means of a piecewise polynomial function so as to optimize a distribution of the dose of the electron beam deposited in the target and/or a geometry of a portion of the target receiving the electron beam, and

the piecewise polynomial function defines an interval that is divided into at least two sub-intervals, each sub-interval being associated with a polynomial function different from another polynomial function associated with adjacent sub-interval.

13. The electron beam lithography device according to claim 12 , wherein the computing module is configured to optimize the distribution of the dose deposited in the target by a calculation comprising a convolution of the point spread function and of a geometry of a pattern to be etched.

14. A method for forming a pattern in a resist layer covering a substrate by projecting an electron beam onto the resist layer, the method comprising:

performing, by means of a computer, a convolution step or a deconvolution step using a point spread function modelling an interaction of the electron beam with the resist layer, wherein the point spread function models a radial variation of an energy of the electron beam or a dose of the electron beam deposited in the resist layer by means of a piecewise polynomial function, to produce correction data; and

correcting, at an electron beam lithography system, electron scattering effects in a target on a basis of the correction data,

wherein the piecewise polynomial function defines an interval that is divided into at least two sub-intervals, each sub-interval being associated with a polynomial function different from another polynomial function associated with adjacent sub-interval.