Display backplane and method of fabricating the same
An organic light emitting display is provided. The organic light emitting display comprises a multi-type thin-film transistor (TFT) and an organic light emitting diode. The multi-type TFT has a low-temperature-poly-silicon (LTPS) TFT and an oxide semiconductor TFT (oxide TFT) disposed on the LTPS TFT. The organic light emitting diode is electrically connected to the multi-type TFT. The LTPS TFT and the oxide TFT are connected to the same gate line.
1. An organic light emitting display comprising:
a multi-type thin-film transistor (TFT) having a low-temperature-poly-silicon (LTPS) TFT and an oxide semiconductor TFT (oxide TFT) disposed on the LTPS TFT; and
an organic light emitting diode electrically connected to the multi-type TFT,
wherein the LTPS TFT and the oxide TFT are connected to the same gate line,
a gate electrode of the LTPS TFT is configured to work as a gate electrode of the oxide TFT, and
a source electrode of the LTPS TFT is configured to work as a source electrode of the oxide TFT, and a drain electrode of the LTPS TFT is configured to work as a drain electrode of the oxide TFT.
2. The organic light emitting display of claim 1 , wherein the gate electrode of the LTPS TFT is disposed on an active layer of the LTPS TFT,
an active layer of the oxide TFT is disposed on the gate electrode of the LTPS TFT, and
the source electrode and the drain electrode of the LTPS TFT are in contact with the active layer of the LTPS TFT and the active layer of the oxide TFT.
3. The organic light emitting display of claim 1 , wherein an active layer of the LTPS TFT overlaps with an active layer of the oxide TFT.
4. The organic light emitting display of claim 3 , wherein the oxide TFT and the LTPS TFT are disposed such that a channel region of the oxide TFT and a channel region of the LTPS TFT overlap each other.
5. The organic light emitting display of claim 4 , wherein an area of a region where the active layer and a gate electrode of the oxide TFT overlap each other is different from an area of a region where the active layer and a gate electrode of the LTPS TFT overlap each other, and
a length of a region where the active layer and the gate electrode of the oxide TFT overlap each other is different from a length of a region where the active layer and the gate electrode of the LTPS TFT overlap each other.
6. The organic light emitting display of claim 1 , wherein the oxide TFT is an n-type TFT, and
the LTPS TFT is a p-type TFT.
7. The organic light emitting display of claim 1 , wherein the multi-type TFT is configured to operate as a driving TFT.
8. The organic light emitting display of claim 1 , wherein the gate electrode of the LTPS TFT is configured to shield at least a channel region of an active layer of the oxide TFT.
9. The organic light emitting display of claim 1 , further comprising a hydrogen blocking layer disposed under an active layer of the oxide TFT in order to block hydrogen.