Method for producing optoelectronic devices comprising light-emitting diodes

1. A method of manufacturing optoelectronic devices comprising the steps of:

(a) providing a substrate having a first surface;

(b) forming, on the first surface, assemblies of light-emitting diodes comprising, conical or tapered wire-shaped semiconductor elements;

(c) forming, for each assembly of light-emitting diodes, an electrode layer covering each light-emitting diode of said assembly and a conductive layer covering the electrode layer around the light-emitting diodes of said assembly;

(d) covering the entire first surface of a layer encapsulating the light-emitting diodes;

(e) decreasing the substrate thickness, the substrate having, after step (e), a second surface opposite to the first surface;

(f) forming a conductive element insulated from the substrate and crossing the substrate from the second surface all the way to at least the first surface, the conductive element being in contact with the conductive layer;

(g) after step (d), forming, on the second surface, at least one first conductive pad in contact with the substrate; and

(h) after step (d), cutting the obtained structure to separate each assembly of light-emitting diodes.

2. The method of claim 1 , comprising, at step (f), forming, on the second surface, at least one second conductive pad in contact with the conductive element.

3. The method of claim 1 , comprising forming at least one additional conductive element, insulated from the substrate and crossing the substrate from the second surface all the way to at least the first surface, and in contact with the base of at least one of the light-emitting diodes.

4. The method of claim 1 , wherein the forming of the conductive element successively comprises, after step (e), etching an opening in the substrate from the second surface, forming an insulating layer at least on the lateral walls of the opening, and forming a conductive layer covering the insulating layer, or filling the opening with a conductive material.

5. The method of claim 1 , wherein step (f) is at least partly carried out before step (b) and comprises, before step (b), etching an opening in the substrate from the first surface across a portion of the substrate thickness, the opening being opened on the second surface at step (e).

6. The method of claim 5 , wherein the electrode layer and the conductive layer are further formed in the opening.

7. The method of claim 5 , comprising, before step (b), forming an insulating portion at least on the lateral walls of the opening and filling the opening with a conductive material.

8. The method of claim 1 , comprising, before step (e), a step of attaching a support to the layer encapsulating the light-emitting diodes.

9. The method of claim 1 , wherein the layer encapsulating the light-emitting diodes comprises phosphors between the light-emitting diodes.

10. The method of claim 8 , comprising a step of forming a layer of phosphors covering the layer encapsulating the light-emitting diodes or covering the support.

11. The method of claim 10 , comprising a step of forming a layer, between the layer encapsulating the light-emitting diodes and the phosphor layer, capable of transmitting the light rays emitted by the light-emitting diodes and of reflecting the light rays emitted by the phosphors.

12. The method of claim 1 , comprising a step of forming reflectors around the light-emitting diodes between the substrate and the layer encapsulating the light-emitting diodes and having a height greater by 50% than the height of the light-emitting diodes.