Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is −0.45 or less.
1. A slurry comprising:
abrasive grains;
3-amino-1,2,4-triazole-5-carboxylic acid; and
water, wherein
the abrasive grains include a hydroxide of a tetravalent metal element, and
a content of the abrasive grains is 0.3 mass % or less based on the total mass of the slurry.
2. The slurry according to claim 1 , wherein the abrasive grains produce a liquid phase having a content of a non-volatile component of 500 ppm or more when an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass % is centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G.
3. The slurry according to claim 1 , wherein the abrasive grains produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %.
4. The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %.
5. The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.
6. The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.
7. The slurry according to claim 1 , wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.
8. The slurry according to claim 1 , wherein the tetravalent metal element is tetravalent cerium.
9. A polishing-liquid set wherein constituent components of a polishing liquid are separately stored as a first liquid and a second liquid such that the first liquid and the second liquid are mixed to form the polishing liquid, the first liquid is the slurry according to claim 1 , and the second liquid comprises an additive, excluding a compound having an aromatic heterocycle, and water, wherein
the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom, and
a charge of the endocyclic nitrogen atom obtained by using Merz-Kollman method is −0.45 or less.
10. The slurry according to claim 1 , wherein a content of 3-amino-1,2,4-triazole-5-carboxylic acid is 0.01 mmol/L or more based on the total mass of the slurry.
11. The slurry according to claim 1 , wherein an amount of change over time in conductivity of the slurry is 25 mS/m or less.
12. The slurry according to claim 1 , wherein a content of the hydroxide of a tetravalent metal element is 0.3 mass % or less based on the total mass of the slurry.
13. A polishing method for a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad, and
a step of supplying the slurry according to claim 1 between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.
14. A polishing method for a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad,
a step of obtaining the polishing liquid by mixing the first liquid and the second liquid of the polishing-liquid set according to claim 9 , and
a step of supplying the polishing liquid between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.
15. A polishing method for a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad, and
a step of supplying each of the first liquid and the second liquid of the polishing-liquid set according to claim 9 between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.
16. The polishing method according to claim 13 , wherein the material to be polished includes silicon oxide.
17. The polishing method according to claim 13 , wherein a surface of the material to be polished has irregularities.
18. The polishing method according to claim 14 , wherein the material to be polished includes silicon oxide.
19. The polishing method according to claim 14 , wherein a surface of the material to be polished has irregularities.
20. The polishing method according to claim 15 , wherein the material to be polished includes silicon oxide.
21. The polishing method according to claim 15 , wherein a surface of the material to be polished has irregularities.
22. A polishing liquid comprising:
abrasive grains;
3-amino-1,2,4-triazole-5-carboxylic acid;
an additive, excluding a compound having an aromatic heterocycle; and
water, wherein
the abrasive grains include a hydroxide of a tetravalent metal element,
a content of the abrasive grains is 0.3 mass % or less based on the total mass of the polishing liquid,
the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom, and
a charge of the endocyclic nitrogen atom obtained by using Merz-Kollman method is −045 or less.
23. The polishing liquid according to claim 22 , wherein the abrasive grains produce a liquid phase having a content of a non-volatile component of 500 ppm or more when an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass % is centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G.
24. The polishing liquid according to claim 22 , wherein the abrasive grains produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %.
25. The polishing liquid according to claim 22 , wherein the abrasive grains produce absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %.
26. The polishing liquid according to claim 22 , wherein the abrasive grains produce absorbance of 1,000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.
27. The polishing liquid according to claim 22 , wherein the abrasive grains produce absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.
28. The polishing liquid according to claim 22 , wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.
29. The polishing liquid according to claim 22 , wherein the tetravalent metal element is tetravalent cerium.
30. The polishing liquid according to claim 22 , wherein a content of 3-amino-1,2,4-triazole-5-carboxylic acid is 0.01 mmol/L or more based on the total mass of the polishing liquid.
31. The polishing liquid according to claim 22 , wherein an amount of change over time in conductivity of the polishing liquid is 25 mS/m or less.
32. The polishing liquid according to claim 22 , wherein a pH of the polishing liquid is more than 5.0 and 9.0 or less.
33. The polishing liquid according to claim 22 , wherein a pH of the polishing liquid is 6.0-9.0.
34. The polishing liquid according to claim 22 , wherein a content of the hydroxide of a tetravalent metal element is 0.3 mass % or less based on the total mass of the polishing liquid.
35. A polishing method of a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad, and
a step of supplying the polishing liquid according to claim 22 between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.
36. The polishing method according to claim 35 , wherein the material to be polished includes silicon oxide.
37. The polishing method according to claim 35 , wherein a surface of the material to be polished has irregularities.