IP Library › Granted Patent US 9,569,713
Granted Patent B2
US 9,569,713 · App. 14/920,161 · Granted Feb 14, 2017

Semiconductor device, wireless sensor, and electronic device

Inventors: Seiichi Yoneda (Kanagawa, JP); Yukio Maehashi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G06K19/0716G06K19/0702G06K19/073G06K19/07707
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Quick Facts
Patent No.
US 9,569,713
App. No.
14/920,161
Granted
Feb 14, 2017
Kind
B2
Abstract

To provide a semiconductor device that is capable of displaying data even when a radio signal is not supplied. The semiconductor device includes an antenna, a battery, a sensor, a nonvolatile memory, a first circuit, and a second circuit. Power supplied from the antenna is converted into first power via the first circuit. The battery stores the first power and supplies second power. The sensor performs sensing with the second power. The nonvolatile memory stores analog data acquired by the sensor. The second power is used to store the analog data. The second circuit converts the analog data into digital data with the use of the first power. The nonvolatile memory preferably includes an oxide semiconductor transistor.

Claims (70)

1. A semiconductor device comprising:

an antenna;

a battery;

a sensor;

a first nonvolatile memory;

a first circuit; and

a second circuit,

wherein power supplied from the antenna is converted into first power via the first circuit,

wherein the battery is configured to store the first power and supply second power,

wherein the first nonvolatile memory is configured to store analog data acquired by the sensor,

wherein the first nonvolatile memory is configured to store the analog data with the use of the second power, and

wherein the second circuit is configured to convert the analog data into digital data with the use of the first power.

2. The semiconductor device according to claim 1 ,

wherein the sensor acquires the analog data with the use of the second power.

3. The semiconductor device according to claim 1 ,

wherein the first nonvolatile memory includes a transistor whose channel includes an oxide semiconductor.

4. The semiconductor device according to claim 1 , further comprising a second nonvolatile memory,

wherein the second nonvolatile memory is configured to store a time at which the analog data is acquired by the sensor, and

wherein the second nonvolatile memory is configured to store the time with the use of the second power.

5. The semiconductor device according to claim 1 ,

wherein the battery is a lithium-ion secondary battery containing an ionic liquid electrolyte.

6. A display device comprising the semiconductor device according to claim 1 , the display device further comprising:

a solar cell; and

a flexible support.

7. A semiconductor device comprising:

an antenna;

a battery;

a sensor;

a first nonvolatile memory; and

first to fourth circuits,

wherein power supplied from the antenna is converted into first power via the first circuit,

wherein the battery is configured to store the first power and supply second power,

wherein the second circuit is configured to generate a first clock signal,

wherein the third circuit is configured to generate a second clock signal,

wherein the first clock signal has a higher frequency than the second clock signal,

wherein the first nonvolatile memory is configured to store analog data acquired by the sensor,

wherein the first nonvolatile memory is configured to store the analog data with the use of the second power and the second clock signal, and

wherein the fourth circuit is configured to convert the analog data into digital data with the use of the first power and the first clock signal.

8. The semiconductor device according to claim 7 ,

wherein the sensor acquires the analog data with the use of the second power.

9. The semiconductor device according to claim 7 ,

wherein the first nonvolatile memory includes a transistor whose channel includes an oxide semiconductor.

10. The semiconductor device according to claim 7 , further comprising a second nonvolatile memory,

wherein the second nonvolatile memory is configured to store a time at which the analog data is acquired by the sensor, and

wherein the second nonvolatile memory is configured to store the time with the use of the second power.

11. The semiconductor device according to claim 7 ,

wherein the battery is a lithium-ion secondary battery containing an ionic liquid electrolyte.

12. A display device comprising the semiconductor device according to claim 7 , the display device further comprising:

a solar cell; and

a flexible support.

13. A semiconductor device comprising:

an antenna;

a battery;

a power supply circuit;

an analog circuit;

a logic circuit;

a nonvolatile memory;

a power control circuit; and

a display portion,

wherein the power control circuit is configured to control charge and discharge of the battery in accordance with intensity of a radio signal received by the antenna, and

wherein the nonvolatile memory is configured to store an image signal for displaying an image on the display portion.

14. The semiconductor device according to claim 13 ,

wherein the battery is a lithium-ion secondary battery containing an ionic liquid electrolyte.

15. The semiconductor device according to claim 13 ,

wherein the nonvolatile memory includes a transistor whose channel includes an oxide semiconductor.

16. The semiconductor device according to claim 13 ,

wherein the display portion includes a light-emitting diode.

17. A display device comprising the semiconductor device according to claim 13 , the display device further comprising:

a solar cell; and

a flexible support.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2015
From: YONEDA, SEIICHI; MAEHASHI, YUKIO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 036857/0537 →
Priority Claims (2)
JP 2014-217284 · Oct 24, 2014 · national
JP 2014-219299 · Oct 28, 2014 · national
Continuity (1)
Related Publication 20160117584A1 · Apr 28, 2016